Datasheet > 2N5194/D

2N5194/D

更新时间： 2024-11-27 23:19:51

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8页	105K
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Silicon PNP Power Transistors

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2N5194/D 数据手册

ON Semiconductort

2N5194

Silicon PNP Power Transistors

2N5195

*ON Semiconductor Preferred Device

. . . for use in power amplifier and switching circuits, — excellent

safe area limits. Complement to NPN 2N5191, 2N5192

4 AMPERE

POWER TRANSISTORS

SILICON PNP

60–80 VOLTS

*MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

Symbol

2N5194

2N5195

Unit

Vdc

Adc

CEO

5.0

4.0

1.0

Base Current

Total Power Dissipation @ T = 25_C

320

Watts

mW/_C

_C/W

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

CASE 77–09

TO–225AA TYPE

Symbol

Max

Unit

Thermal Resistance, Junction to Case

3.12

_C/W

*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I = 0.1 Adc, I = 0)

Vdc

CEO(sus)

2N5194

2N5195

—

Collector Cutoff Current

(V = 60 Vdc, I = 0)

mAdc

CEO

2N5194

2N5195

—

1.0

(V = 80 Vdc, I = 0)

Collector Cutoff Current

CEX

(V = 60 Vdc, V

= 1.5 Vdc)

2N5194

2N5195

2N5194

2N5195

BE(off)

—

0.1

2.0

(V = 80 Vdc, V

(V = 60 Vdc, V

= 1.5 Vdc, T = 125_C)

(V = 80 Vdc, V

= 1.5 Vdc, T = 125_C)

Collector Cutoff Current

(V = 60 Vdc, I = 0)

mAdc

CBO

2N5194

2N5195

—

0.1

(V = 80 Vdc, I = 0)

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

—

1.0

EBO

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

2N5194/D

12 3 4 5 6 7 8

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