Power MOSFET
XP131A1520SR
Applications
Notebook PCs
◆�N-Channel Power MOS FET
◆�DMOS Structure
■�
●
●
●
●
Cellular and portable phones
On - board power supplies
Li - ion battery systems
◆�Low On-State Resistance : 0.02
◆�Ultra High-Speed Switching
◆�SOP - 8 Package
Ω
(max)
■�General Description
■�Features
The XP131A1520SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
Rds (on) = 0.015 ( Vgs = 10V )
Low on-state resistance :
Ω
Rds (on) = 0.02Ω ( Vgs = 4.5V )
Ultra high-speed switching
Operational Voltage :
4.5V
The small SOP-8 package makes high density mounting possible.
SOP - 8
High density mounting :
■�Pin Configuration
■�Pin Assignment
u
FUNCTION
Source
Gate
PIN NUMBER
PIN NAME
D
D
D
S
S
S
1
2
3
8
7
1 - 3
4
S
G
D
6
5
5 - 8
Drain
4
G
D
SOP - 8 Top View
■�Equivalent Circuit
■�Absolute Maximum Ratings
O
Ta=25 C
SYMBOL
RATINGS
UNITS
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Vdss
Vgss
Id
30
+ 20
10
V
V
A
8
7
6
5
1
2
3
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Idp
Idr
Pd
40
10
A
A
2.5
W
4
Power Dissipation (note)
Channel Temperature
Storage Temperature
O
C
Tch
150
O
C
Tstg
-55 to 150
N - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a glass epoxy PCB
361