Datasheet > XP02501(XP2501)

XP02501(XP2501)

更新时间： 2024-09-18 23:33:47

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描述
複合デバイス－複合トランジスタ

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XP02501(XP2501) 数据手册

Composite Transistors

XP02501 (XP2501)

Silicon NPN epitaxial planer transistor

Unit: mm

For general amplification

2.1 0.1

1.25 0.1

0.425

Features

Two elements incorporated into one package.

(Base-coupled transistors)

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SD0601A(2SD601A) × 2 elements

0.2 0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Emitter (Tr1)

2 : Base

3 : Emitter (Tr2)

4 : Collector (Tr2)

5 : Collector (Tr1)

EIAJ : SC–88A

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

S–Mini Type Package (5–pin)

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Rating

Marking Symbol: 5W

Internal Connection

element

100

˚C

I_CP

200

Tr1

P_T

150

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

I_C= 10µA, I_E= 0

V_CEO

V_EBO

I_CBO

I_CEO

h_FE

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

V_CB= 20V, I_E= 0

V_CE= 10V, I_B= 0

V_CE= 10V, I_C= 2mA

0.1

100

460

µA

Collector cutoff current

Forward current transfer ratio

160

0.5

Forward current transfer h_FEratio

h_FE(small/large)^*1V_CE= 10V, I_C= 2mA

0.99

0.1

Collector to emitter saturation voltage V_CE(sat)

I_C= 100mA, I_B= 10mA

0.3

MHz

Transition frequency

f_T

V_CB= 10V, I_E= –1mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

150

3.5

Collector output capacitance

^*1Ratio between 2 elements

C_ob

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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