Datasheet > WTM510N062L

WTM510N062L

更新时间： 2024-09-30 14:55:51

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
6页	512K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM510N062L 数据手册

WTM510N062L-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_DS(ON)

• Logic Driven

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

Source

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN5060 Plastic Package

Applications

• Synchronous Rectification for Quick Charger 3.0

• Synchronous Rectification for AC/DC adapter and

DC/DC brick power

Absolute Maximum Ratings (T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

100

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

T_a= 25℃

T_a= 70℃

Drain Current ¹⁾

I_D

Drain Current

I_D

17.5

Peak Drain Current, Pulsed ²⁾

Power Dissipation ³⁾

I_DM

P_D

185

T_c= 25℃

113.5

45.5

T_c= 100℃

T_a= 25℃

6.2

Power Dissipation ⁴⁾

P_DSM

T_a= 70℃

Single-Pulse Avalanche Current ²⁾

I_AS

E_AS

Single-Pulse Avalanche Energy (L = 0.1 mH) ²⁾

℃

- 55 to + 150

Operating and Storage Temperature Range

T_J, T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

Thermal Resistance-Junction to Ambient ⁴⁾

t ≤ 10 s

℃

Thermal Resistance-Junction to Ambient ^{4) 5)}Steady-State

R_θJA

Thermal Resistance-Junction to Case

¹⁾The maximum current rating is package limited.

Steady-State

R_θJC

1.1

²⁾Single pulse width limited by junction temperature T_J(MAX)= 150℃.

³⁾The power dissipation P_Dis based on T_J(MAX)= 150℃, using junction to case thermal resistance, and is more useful in setting the

upper dissipation limit for cases where additional heatsinking is used.

⁴⁾The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_a= 25℃.

The Power dissipation P_DSMis based on R_θJAt ≤ 10s value and the maximum allowed junction temperature of 150℃. The value in

any given application depends on the user's specific board design.

⁵⁾The R_θJAis the sum of the thermal impedance from junction to case R_θJCand case to ambient.

1 / 6

Dated: 30/07/2020 Rev: 02

12 3 4 5 6

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