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WTM510N065L PDF预览

WTM510N065L

更新时间: 2024-11-21 14:53:19
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
8页 732K
描述
功率金氧半电晶体

WTM510N065L 数据手册

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WTM510N065L-HAF  
N-Channel Enhancement Mode MOSFET  
Drain  
Features  
• Low RDS( ON )  
• Fully Characterized Capacitance and Avalanche  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Gate  
Source  
Application  
1.Source 2.Source 3.Source 4.Gate  
5.Drain 6.Drain 7.Drain 8.Drain  
DFN5060 Plastic Package  
Synchronous Rectification  
BLDC Motor drive applications  
• Battery powered circuits  
• Resonant mode power supplies  
Key Parameters  
Parameter  
BVDSS  
Value  
100  
Unit  
V
8.3 @ VGS = 10 V  
10.6 @ VGS = 4.5 V  
1.6  
mΩ  
mΩ  
V
RDS(ON) Max  
VGS(th) typ  
Qg typ  
56.4 @ VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Symbol  
Value  
100  
Unit  
V
Parameter  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
± 20  
V
Tc = 25℃  
Tc = 100℃  
50  
32  
ID  
A
Continuous drain current  
Peak Drain Current, Pulsed 1)  
Avalanche Current  
IDM  
IAS  
250  
16.8  
A
A
Single Pulse Avalanche Energy 2)  
EAS  
14.1  
mJ  
W
Ptot  
31  
Power Dissipation  
Tc = 25℃  
TJ, Tstg  
- 55 to + 150  
Operating Junction and Storage Temperature Range  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
4
Unit  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient 3)  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, ID = 16.8 A, VGS = 10 V.  
/W  
/W  
RθJA  
50  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 8  
Dated: 31/03/2021 Rev: 02  

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