Datasheet > WTM510N065L

WTM510N065L

更新时间： 2024-09-30 14:53:19

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	732K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM510N065L 数据手册

WTM510N065L-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_{DS( ON )}

• Fully Characterized Capacitance and Avalanche

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

Application

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

• Synchronous Rectification

• BLDC Motor drive applications

• Battery powered circuits

• Resonant mode power supplies

Key Parameters

Parameter

BV_DSS

Value

100

Unit

8.3 @ V_GS= 10 V

10.6 @ V_GS= 4.5 V

1.6

mΩ

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

56.4 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Symbol

Value

100

Unit

Parameter

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Continuous drain current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

250

16.8

Single Pulse Avalanche Energy ²⁾

E_AS

14.1

℃

P_tot

Power Dissipation

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 16.8 A, V_GS= 10 V.

℃

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 31/03/2021 Rev: 02

12 3 4 5 6 7 8

中文翻译

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