WTM510N082L-HAF
N-Channel Enhancement Mode MOSFET
Drain
Features
• Low Miller Charge
• Fully Characterized Capacitance and Avalanche
• Halogen and Antimony Free(HAF),
RoHS compliant
Gate
Source
Application
1.Source 2.Source 3.Source 4.Gate
5.Drain 6.Drain 7.Drain 8.Drain
DFN5060 Plastic Package
• Half-bridge and full-bridge topologies
• Battery powered circuits
• Synchronous rectifier applications
• Resonant mode power supplies
Key Parameters
Parameter
BVDSS
Value
100
Unit
V
9.5 @ VGS = 10 V
14 @ VGS = 4.5 V
1.7
mΩ
mΩ
V
RDS(ON) Max
VGS(th) typ
Qg typ
37 @ VGS = 10 V
nC
Absolute Maximum Ratings(at Ta = 25℃ unless otherwise specified)
Symbol
Value
100
Unit
V
Parameter
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
V
Tc = 25℃
Tc = 100℃
42
26
ID
A
Drain Current
Peak Drain Current, Pulsed 1)
Avalanche Current
IDM
IAS
200
12
A
A
Single Pulse Avalanche Energy 2)
EAS
21.6
mJ
W
℃
Ptot
31
Power Dissipation
Tc = 25℃
TJ, Tstg
- 55 to + 150
Operating Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
4
Unit
℃/W
℃/W
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.3 mH, Rg = 25 Ω, ID = 12 A, VGS = 10 V.
RθJA
50
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 14/10/2020 Rev: 01