WTM603P260L-HAF
Dual P-Channel Enhancement Mode MOSFET
Features
• Low On-Resistance
• Low Input Capacitance
• Low Miller Charge
• Low Input/Output Leakage
• Halogen and Antimony Free(HAF),
RoHS compliant
Q1:1.Source 2.Gate 7.Drain 8.Drain
Q2:3.Source 4.Gate 5.Drain 6.Drain
DFN5060 Plastic Package
Applications
• Load Switch
• Automotive Systems
• Motor / Body Load Control
• DC-DC converters and Off-line UPS
Key Parameters (Q1/Q2)
Parameter
-BVDSS
Value
30
Unit
V
27 @ -VGS = 10 V
45 @ -VGS = 4.5 V
1.4
RDS(ON) Max
mΩ
-VGS(th) typ
Qg typ
V
22 @ -VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified) (Q1/Q2)
Parameter
Symbol
-VDS
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
30
19
V
Tc = 25℃
Tc = 100℃
Drain Current
-ID
A
Peak Drain Current, Pulsed 1)
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy 2)
Power Dissipation
-IDM
-IAS
90
A
A
20
EAS
20
41
mJ
W
℃
PD
Tc = 25℃
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
Thermal Characteristics (Q1/Q2)
Parameter
Symbol
RθJC
Max.
3
Unit
Thermal Resistance from Junction to Case
℃
℃
/W
/W
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, -IAS = 20 A, VGS = 10 V.
RθJA
43
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 01/08/2023 Rev: 03