WTM403C290LS-HAF
Complementary N/P-Channel Enhancement Mode MOSFET
Features
• Low RDS( ON )
• Low Input Capacitance
• Halogen and Antimony Free(HAF),
RoHS compliant
Q1:1.Source 2.Gate 7.Drain 8.Drain
Q2:3.Source 4.Gate 5.Drain 6.Drain
DFN3030 Plastic Package
Application
• Motor/Body Load Control
• Load Switch
• DC-DC converters and Off-line UPS
Key Parameters(Q1)
Parameter
Key Parameters(Q2)
Value
30
Unit
V
Parameter
-BVDSS
Value
30
Unit
V
BVDSS
9.3 @ VGS = 10 V
13 @ VGS = 4.5 V
1.5
30.1 @ -VGS = 10 V
53.3 @ -VGS = 4.5 V
1.5
RDS(ON) Max
mΩ
RDS(ON) Max
mΩ
VGS(th) typ
Qg typ
V
-VGS(th) typ
Qg typ
V
24 @ VGS = 10 V
nC
19.8 @ -VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Value
Symbol
Unit
Parameter
Q1
Q2
- 30
± 20
VDS
VGS
V
V
Drain-Source Voltage
Gate-Source Voltage
30
± 20
Tc = 25℃
29
18
- 18.8
- 11.8
ID
A
Continuous Drain Current
Tc = 100℃
Peak Drain Current, Pulsed 1)
Avalanche Current
120
18.9
17.8
- 80
- 20.8
21.7
IDM
IAS
A
A
Single Pulse Avalanche Energy 2)
Power Dissipation
EAS
mJ
W
℃
PD
10.8
Tc = 25℃
TJ, Tstg
- 55 to + 150
Operating Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Symbol
Max.
11.4
70
Unit
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, VGS = 10 V.
RθJC
℃
℃
/W
/W
RθJA
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
®
1 / 13
Dated: 22/06/2021 Rev: 02