WTM502P057L-HAF
P-Channel Enhancement Mode MOSFET
Drain
Features
• Low leakage current
• Low drain-source on-resistance
• Enhancement mode
Gate
• Halogen and Antimony Free(HAF), RoHS compliant
Source
Applications
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
DFN5060 Plastic Package
• Lithium-Iom Secondary Batteries
• Power Management Switches
Key Parameters
Parameter
-BVDSS
Value
20
Unit
V
5.7 @ -VGS = 4.5 V
8 @ -VGS = 2.5 V
0.57
RDS(ON) Max
mΩ
-VGS(th) typ
Qg typ
V
88 @ -VGS = 4.5 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
-VDS
VGS
± 12
V
Tc = 25℃
Tc = 100℃
72.5
45.6
Drain Current
-ID
A
Peak Drain Current, Pulsed 1)
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy 2)
Power Dissipation
-IDM
-IAS
300
43.4
A
A
EAS
178.9
mJ
W
℃
PD
40.9
Tc = 25℃
Operating Junction and Storage Temperature Range
TJ,Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
3
Unit
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.19 mH, Rg = 25 Ω, -IAS = 43.4 A, VGS = 10 V.
℃
℃
/W
/W
RθJA
37
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 03/01/2023 Rev: 02