Datasheet > UPA1728G

UPA1728G

更新时间： 2024-02-04 18:19:29

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	69K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 9A I(D) \| SO

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中文翻译

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UPA1728G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	9 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

UPA1728G 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1728

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The µPA1728 is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

PACKAGE DRAWING (Unit: mm)

1, 2, 3

5, 6, 7, 8 ; Drain

; Source

; Gate

FEATURES

• Single chip type

• Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

= 19 mΩ TYP. (V = 10 V, I = 4.5 A)

6.0 ±0.3

4.4

= 23 mΩ TYP. (V = 4.5 V, I = 4.5 A)

5.37 Max.

0.8

= 24 mΩ TYP. (V = 4.0 V, I = 4.5 A)

iss

• Low C : C = 1700 pF TYP.

• Built-in G-S protection diode

0.5 ±0.2

0.10

• Small and surface mount package (Power SOP8)

1.27 0.78 Max.

+0.10

–0.05

0.40

0.12 M

★

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1728G

Power SOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, All terminals are connected.)

DSS

Drain to Source Voltage (V = 0 V)

±20

±9

EQUIVALENT CIRCUIT

GSS

Gate to Source Voltage (V = 0 V)

D(DC)

Drain Current (DC)

Drain

Drain Current (Pulse) ^Note1

D(pulse)

±36

2.0

150

Note2

Body

Diode

Total Power Dissipation (T = 25°C)

°C

Gate

Channel Temperature

stg

Storage Temperature

–55 to + 150 °C

Gate

Protection

Diode

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Source

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%

2. Mounted on ceramic substrate of 1200 mm²x 2.2 mm

3. Starting T = 25°C, V = 30 V, R = 25 Ω, T = 20 → 0 V

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published March 2002 NS CP(K)

Printed in Japan

G14321EJ3V0DS00 (3rd edition)

The mark ★ shows major revised points.

1999,2000,2001

12 3 4 5 6 7 8

中文翻译

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与UPA1728G相关器件

型号	品牌	获取价格	描述	数据表
UPA1728G-A	NEC	获取价格	暂无描述
UPA1730	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1730G	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1730G-A	RENESAS	获取价格	13A, 30V, 0.015ohm, P-CHANNEL, Si, POWER, MOSFET, SOP-8
UPA1730TP	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA1730TP-AZ	NEC	获取价格	Power Field-Effect Transistor, 28A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Met
UPA1731	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1731G	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1731G	RENESAS	获取价格	10A, 30V, 0.022ohm, P-CHANNEL, Si, POWER, MOSFET, SOP-8
UPA1731G-A	NEC	获取价格	Power Field-Effect Transistor, 10A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Met

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