Datasheet > UPA1742

UPA1742

更新时间： 2024-09-23 23:39:35

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UPA1742TP Data Sheet \| Data Sheet[04/2003]

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UPA1742 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA1742TP

SWITCHING

N-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µPA1742TP is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, and designed for high voltage applications

such as DC/DC converter.

1, 2, 3

5, 6, 7, 8, 9 ; Drain

; Source

; Gate

FEATURES

• High voltage: V^DSS= 250 V

• Gate voltage rating: ±30 V

6.0 ±0.3

0.8 ±0.2

4.4 ±0.15

+0.17

–0.2

5.2

• Low on-state resistance

R^DS(on)= 0.55 Ω MAX. (V^GS= 10 V, I^D= 3.5 A)

• Low input capacitance

0.10

1.27 TYP.

C^iss= 460 pF TYP. (V^DS= 10 V, V^GS= 0 V)

• Built-in gate protection diode

• Small and surface mount package (Power HSOP8)

+0.10

0.40

0.12 M

–0.05

2.0 ±0.2

ORDERING INFORMATION

4.1 MAX.

PART NUMBER

PACKAGE

µPA1742TP

Power HSOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, unless otherwise noted. All terminals are connected.)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

250

±30

±7.0

±21

EQUIVALENT CIRCUIT

Drain

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C) ^Note2

Channel Temperature

°C

Body

Diode

Gate

P^T2

1.0

Tch

150

Gate

Storage Temperature

Tstg

−55 to +150 °C

Protection

Diode

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Repetitive Avalanche Current ^Note4

Source

I^AS

7.0

4.9

7.0

4.9

E^AS

I^AR

Repetitive Pulse Avalanche Energy ^Note4

E^AR

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

3. Starting T^ch= 25°C, V^DD= 125 V, R^G= 25 Ω, L = 100 µH, V^GS= 20 → 0 V

4. T^ch(peak)≤ 150°C, L = 100 µH

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16325EJ1V0DS00 (1st edition)

Date Published April 2003 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7

中文翻译

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与UPA1742相关器件

型号	品牌	获取价格	描述	数据表
UPA1742TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1742TP-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO
UPA1742TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 7A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-
UPA1742TP-E2-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO
UPA1743	ETC	获取价格	UPA1743TP Data Sheet \| Data Sheet[04/2003]
UPA1743TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1743TP-AZ	NEC	获取价格	暂无描述
UPA1744	ETC	获取价格	UPA1744TP Data Sheet \| Data Sheet[03/2003]
UPA1744TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1744TP-AZ	NEC	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Met

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