UPA1728G-A

更新时间： 2024-02-14 08:37:58

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
4页	41K
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中文翻译

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数据手册

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UPA1728G-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1728

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1728 is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

1, 2, 3

; Source

; Gate

5, 6, 7, 8 ; Drain

FEATURES

• Single chip type

• Low On-state Resistance

6.0 ±0.3

4.4

★

DS(on)1

DS(on)2

DS(on)3

= 19 mΩ (TYP.) (V = 10 V, I = 4.5 A)

5.37 Max.

0.8

= 23 mΩ (TYP.) (V = 4.5 V, I = 4.5 A)

= 24 mΩ (TYP.) (V = 4.0 V, I = 4.5 A)

iss

• Low C : C = 1700 pF (TYP.)

0.5 ±0.2

0.10

• Built-in G-S protection diode

1.27 0.78 Max.

+0.10

–0.05

0.40

0.12 M

• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1728

Power SOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C, All terminals are connected.)

DSS

Drain to Source Voltage (V = 0 V)

±20

±9

EQUIVALENT CIRCUIT

GSS

Gate to Source Voltage (V = 0 V)

D(DC)

Drain Current (DC)

Drain

Drain Current (Pulse) ^Note1

D(pulse)

±36

2.0

150

Note2

Body

Total Power Dissipation (T = 25 °C)

°C

Diode

Gate

Channel Temperature

stg

Storage Temperature

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

–55 to + 150 °C

Gate

Protection

Diode

Source

8.1

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

2. Mounted on ceramic substrate of 1200 mm²x 2.2 mm

★

3. Starting T^ch= 25°C, R^G= 25 Ω, T^GS= 20 V →0 V

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

Exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published January 2000 NS CP(K)

Printed in Japan

G14321EJ1V0DS00 (1st edition)

The mark ★ shows major revised points.

1999,2000

12 3 4

中文翻译

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与UPA1728G-A相关器件

型号	品牌	获取价格	描述	数据表
UPA1730	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1730G	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1730G-A	RENESAS	获取价格	13A, 30V, 0.015ohm, P-CHANNEL, Si, POWER, MOSFET, SOP-8
UPA1730TP	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA1730TP-AZ	NEC	获取价格	Power Field-Effect Transistor, 28A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Met
UPA1731	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1731G	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1731G	RENESAS	获取价格	10A, 30V, 0.022ohm, P-CHANNEL, Si, POWER, MOSFET, SOP-8
UPA1731G-A	NEC	获取价格	Power Field-Effect Transistor, 10A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Met
UPA1731G-E2-A	RENESAS	获取价格	N Channel Power MOSFET, SOP, /Embossed Tape

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