UPA1740TP-AZ

更新时间： 2024-01-01 01:32:49

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管开关光电二极管
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中文翻译

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UPA1740TP-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1740TP

SWITCHING

N-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µPA1740TP is N-channel MOS FET device that features a

low on-state resistance and excellent swiching characteristics, and

designed for high voltage applications such as DC/DC converter.

1, 2, 3

5, 6, 7, 8, 9 : Drain

: Source

: Gate

FEATURES

• High voltage: V^DSS= 200 V

• Gate voltage rating: ±30 V

• Low on-state resistance

6.0 ±0.3

0.8 ±0.2

4.4 ±0.15

+0.17

–0.2

5.2

R^DS(on)= 0.44 Ω MAX. (V^GS= 10 V, I^D= 3.5 A)

• Low input capacitance

C^iss= 420 pF TYP. (V^DS= 10 V, V^GS= 0 V)

• Built-in gate protection diode

• Small and surface mount package (Power HSOP8)

• Avalanche capability rated

0.10 S

1.27 TYP.

+0.10

–0.05

0.40

0.12 M

2.0 ±0.2

ORDERING INFORMATION

4.1 MAX.

PART NUMBER

PACKAGE

µPA1740TP

Power HSOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, Unless otherwise noted, All terminals are connected.)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

200

±30

±7.0

±21

EQUIVALENT CIRCUIT

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)^Note2

Channel Temperature

°C

P^T2

1.0

Drain

Tch

150

Storage Temperature

Tstg

–55 to + 150

7.0

Body

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Repetitive Avalanche Current ^Note4

Repetitive Avalanche Energy ^Note4

Diode

Gate

I^AS

E^AS

4.9

Gate

I^AR

7.0

Protection

Diode

Source

E^AR

2.2

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec

3. Starting T^ch= 25°C, V^DD= 100 V, R^G= 25 Ω, L = 100 µH, V^GS= 20 → 0 V

4. T^ch≤ 125°C, V^DD= 100 V, R^G= 25 Ω

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2002 NS CP(K)

Printed in Japan

G15937EJ1V0DS00 (1st edition)

2001

12 3 4 5 6 7 8

中文翻译

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与UPA1740TP-AZ相关器件

型号	品牌	获取价格	描述	数据表
UPA1741	ETC	获取价格	UPA1741TP Data Sheet \| Data Sheet[04/2003]
UPA1741TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1741TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 5A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-
UPA1742	ETC	获取价格	UPA1742TP Data Sheet \| Data Sheet[04/2003]
UPA1742TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1742TP-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO
UPA1742TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 7A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-
UPA1742TP-E2-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO
UPA1743	ETC	获取价格	UPA1743TP Data Sheet \| Data Sheet[04/2003]
UPA1743TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET

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