5秒后页面跳转
捷配首页

Datasheet > UPA1742TP-AZ
UPA1742TP-AZ PDF预览

UPA1742TP-AZ

更新时间： 2024-02-28 00:33:28
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
7页 80K
描述
Small Signal Field-Effect Transistor, 7A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8

阅读下载

中文翻译

获取价格

UPA1742TP-AZ 技术参数

生命周期：Obsolete零件包装代码：SOT
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.55 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e6元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

UPA1742TP-AZ 数据手册

 浏览型号UPA1742TP-AZ的Datasheet PDF文件第2页浏览型号UPA1742TP-AZ的Datasheet PDF文件第3页浏览型号UPA1742TP-AZ的Datasheet PDF文件第4页浏览型号UPA1742TP-AZ的Datasheet PDF文件第5页浏览型号UPA1742TP-AZ的Datasheet PDF文件第6页浏览型号UPA1742TP-AZ的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µ PA1742TP  
SWITCHING  
N-CHANNEL POWER MOS FET  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The µPA1742TP is N-channel MOS FET device that  
features a low on-state resistance and excellent switching  
characteristics, and designed for high voltage applications  
such as DC/DC converter.  
8
5
1, 2, 3  
4
5, 6, 7, 8, 9 ; Drain  
; Source  
; Gate  
FEATURES  
• High voltage: VDSS = 250 V  
• Gate voltage rating: ±30 V  
6.0 ±0.3  
1
4
0.8 ±0.2  
4.4 ±0.15  
+0.17  
–0.2  
5.2  
• Low on-state resistance  
S
RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 3.5 A)  
• Low input capacitance  
0.10  
S
1.27 TYP.  
Ciss = 460 pF TYP. (VDS = 10 V, VGS = 0 V)  
• Built-in gate protection diode  
• Small and surface mount package (Power HSOP8)  
+0.10  
0.40  
0.12 M  
–0.05  
1
4
2.0 ±0.2  
9
ORDERING INFORMATION  
4.1 MAX.  
PART NUMBER  
PACKAGE  
8
5
µPA1742TP  
Power HSOP8  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted. All terminals are connected.)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
250  
±30  
±7.0  
±21  
24  
V
V
EQUIVALENT CIRCUIT  
A
Drain  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C) Note2  
Channel Temperature  
W
W
°C  
Body  
Diode  
Gate  
PT2  
1.0  
Tch  
150  
Gate  
Storage Temperature  
Tstg  
−55 to +150 °C  
Protection  
Diode  
Single Avalanche Current Note3  
Single Avalanche Energy Note3  
Repetitive Avalanche Current Note4  
Source  
IAS  
7.0  
4.9  
7.0  
4.9  
A
mJ  
A
EAS  
IAR  
Repetitive Pulse Avalanche Energy Note4  
EAR  
mJ  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm  
3. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V  
4. Tch(peak) ≤ 150°C, L = 100 µH  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G16325EJ1V0DS00 (1st edition)  
Date Published April 2003 NS CP(K)  
Printed in Japan  
2002  
1234567

中文翻译

下载PDF

与UPA1742TP-AZ相关器件

型号 品牌 获取价格 描述 数据表
UPA1742TP-E2-AZ RENESAS

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO
UPA1743 ETC

获取价格

 		UPA1743TP Data Sheet | Data Sheet[04/2003]
UPA1743TP NEC

获取价格

 		SWITCHING N-CHANNEL POWER MOSFET
UPA1743TP-AZ NEC

获取价格

 		暂无描述
UPA1744 ETC

获取价格

 		UPA1744TP Data Sheet | Data Sheet[03/2003]
UPA1744TP NEC

获取价格

 		SWITCHING N-CHANNEL POWER MOSFET
UPA1744TP-AZ NEC

获取价格

 		Power Field-Effect Transistor, 10A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Met
UPA1750 NEC

获取价格

 		Switching dual P-CHANNEL power mos fet industrial use
UPA1751 ETC

获取价格

 		TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO
UPA1752 ETC

获取价格

 		TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 20V V(BR)DSS | 5A I(D) | SO

与UPA1742TP-AZ相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证