Datasheet > UPA1759

UPA1759

更新时间： 2024-09-24 04:26:55

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
4页	40K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

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UPA1759 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1759

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

PACKAGE DRAWING (Unit : mm)

DESCRIPTION

This product is Dual N-channel MOS Field Effect

Transistor designed for DC/DC converters.

; Source 1

; Gate 1

7, 8; Drain 1

FEATURES

• Dual chip type

• Low on-resistance

; Source 2

; Gate 2

5, 6; Drain 2

DS(on)1

= 110 mΩ TYP. (V = 10 V, I = 2.5 A)

6.0 ±0.3

4.4

DS(on)2

= 170 mΩ TYP. (V = 4 V, I = 2.5 A)

5.37 Max.

0.8

iss

• Low input capacitance C = 190 pF TYP.

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)

0.5 ±0.2

0.10

1.27 0.78 Max.

+0.10

–0.05

ORDERING INFORMATION

0.40

0.12 M

PART NUMBER

PACKAGE

µPA1759G

Power SOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C, All terminals are connected.)

DSS

Drain to Source Voltage (V = 0)

GSS

Gate to Source Voltage (V = 0)

±20

±5.0

EQUIVALENT CIRCUIT

D(DC)

Drain Current (DC)

(1/2 Circuit)

Drain Current (pulse) ^Note1

D(pulse)

°C

±20

Total Power Dissipation (1 unit) ^Note2

Total Power Dissipation (2 unit) ^Note2

Channel Temperature

Drain

1.7

2.0

150

Body

Diode

Gate

stg

Storage Temperature

–55 to + 150

2.5

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

Gate

0.625

Protection

Diode

Source

2. Mounted on ceramic substrate of 1200 mm²x 1.7 mm

3. Starting T^ch= 25 °C, R^G= 25 Ω, V^GS= 20 V → 0 V

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 1999 NS CP(K)

Printed in Japan

G13622EJ1V0DS00 (1st edition)

1999

12 3 4

中文翻译

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与UPA1759相关器件

型号	品牌	获取价格	描述	数据表
UPA1759G	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1759G-A	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,5A I(D),SO
UPA1760	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1760G-E1	RENESAS	获取价格	UPA1760G-E1
UPA1760G-E1-AT	RENESAS	获取价格	Nch Dual Power Mosfet 30V 8.0A 26.0Mohm Power Sop8, SOP, /Embossed Tape
UPA1760G-E2-A	RENESAS	获取价格	Nch Dual Power Mosfet 30V 8.0A 26.0Mohm Power Sop8, SOP, /Embossed Tape
UPA1760G-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),SO
UPA1763	NEC	获取价格	SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1763G	NEC	获取价格	SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1763G-A	NEC	获取价格	Power Field-Effect Transistor, 4.5A I(D), 60V, 0.066ohm, 2-Element, N-Channel, Silicon, Me

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