Datasheet > UPA1753

UPA1753

更新时间： 2024-09-23 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	83K
描述
TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 20V V(BR)DSS \| 6A I(D) \| SO

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中文翻译

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UPA1753 数据手册

DATA SHEET

MOS FIELD EFFECT POWER TRANSISTORS

µPA1753

SWITCHING

DUAL N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

This product is Dual N-Channel MOS Field Ef-

fect Transistor designed for power management

application of notebook computers, and Li-ion bat-

tery application.

(in: millimeter)

; Source 1

; Gate 1

7, 8; Drain 1

FEATURES

; Source 2

; Gate 2

•

Dual MOSFET chips in small package

2.5 V Gate Drive Type and Low On-Resistance

5, 6; Drain 2

DS(on)1 = 30 mΩ Max. (VGS = 4.5 V, I

DS(on)2 = 40 mΩ Max. (VGS = 2.5 V, I

= 3.0 A)

6.0 ±0.3

4.4

5.37 Max.

0.8

•

Low C^issCiss = 740 pF Typ.

Built-in G-S Protection Diode

Small and Surface Mount Package

(Power SOP8)

0.5 ±0.2

0.10

1.27 0.78 Max.

+0.10

–0.05

0.40

0.12 M

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C, all terminals are connected)

Drain to Source Voltage

Gate to Source Voltage

VDSS

VGSS

I^D(DC)

ID(pulse)

±8.0

Drain

Drain Current (DC)

±6.0

Body

Diode

Drain Current (pulse)^{Note 1}

Total Power Dissipation (1 unit)^{Note 2}

Total Power Dissipation (2 unit)^{Note 2}

Channel Temperature

±24

Gate

1.7

˚C

2.0

Gate

Protection

Diode

T^ch

150

Source

Storage Temperature

Tstg

–55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. TA = 25 ˚C, Mounted on ceramic substrate of 2000 mm²× 1.1 mm

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device acutally used, an additional protection circuit is externally required if voltage exceeding the rated voltage may

be applied to this device.

The information in this document is subject to change without notice.

Document No. D11496EJ2V0DS00 (2nd edition)

Date Published October 1996 N

Printed in Japan

1996

12 3 4 5 6 7 8

中文翻译

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