Datasheet > UPA1764G

UPA1764G

更新时间： 2024-01-04 12:00:29

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
4页	41K
描述
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

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技术参数
数据手册

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UPA1764G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	最大漏极电流 (Abs) (ID)：	7 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e6
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Bismuth (Sn98Bi2)	Base Number Matches：	1

UPA1764G 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1764

SWITCHING

DUAL N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1764 is N-channel MOS Field Effect

Transistor designed for high current switching

applications.

: Source 1

: Gate 1

7, 8 : Drain 1

: Source 2

: Gate 2

FEATURES

• Dual chip type

5, 6 : Drain 2

• Low On-state Resistance

6.0 ±0.3

4.4

DS(on)1

DS(on)2

DS(on)3

= 27 mΩ (TYP.) (V = 10 V, I = 3.5 A)

★

= 32 mΩ (TYP.) (V = 4.5 V, I = 3.5 A)

5.37 MAX.

0.8

= 34 mΩ (TYP.) (V = 4.0 V, I = 3.5 A)

• Low input capacitance

★

iss

= 1300 pF (TYP.)

0.5 ±0.2

• Built-in G-S protection diode

0.10

1.27 0.78 MAX.

• Small and surface mount package (Power SOP8)

+0.10

0.40

0.12 M

–0.05

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1764G

Power SOP8

EQUIVALENT CIRCUIT

(1/2 circuit)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, All terminals are connected.)

Drain

DSS

Drain to Source Voltage

±20

±7

GSS

Gate to Source Voltage

Body

D(DC)

Diode

Gate

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation (1 unit) ^Note2

Total Power Dissipation (2 unit) ^Note2

Channel Temperature

D(pulse)

±28

1.7

2.0

150

Gate

Protection

Diode

°C

Source

stg

Storage Temperature

–55 to +150 °C

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

★

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 2000 mm²x 2.2 mm

3. Starting T^ch= 25 °C, R^G= 25 Ω, V^GS= 20 V → 0 V

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published January 2000 NS CP(K)

Printed in Japan

G14329EJ1V0DS00 (1st edition)

The mark ★ shows major revised points.

1999,2000

12 3 4

中文翻译

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与UPA1764G相关器件

型号	品牌	获取价格	描述	数据表
UPA1764G(0)-E1-A	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,7A I(D),SO
UPA1764G(0)-E2-AT	RENESAS	获取价格	Power MOSFETs for Automotive, SOP, /
UPA1764G(0)-E2-AY	RENESAS	获取价格	Power MOSFETs for Automotive, SOP, /
UPA1764G(0)-E2-AZ	RENESAS	获取价格	暂无描述
UPA1764G-A	RENESAS	获取价格	7A, 60V, 0.046ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8
UPA1764G-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,7A I(D),SO
UPA1770	NEC	获取价格	SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1770G	NEC	获取价格	SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1770G-A	NEC	获取价格	Power Field-Effect Transistor, 6A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Meta
UPA1770G-E1	RENESAS	获取价格	UPA1770G-E1

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