是否无铅: | 不含铅 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.37 |
雪崩能效等级(Eas): | 98 mJ | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.046 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e6 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 28 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1764G-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,7A I(D),SO | |
UPA1770 | NEC |
获取价格 |
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
UPA1770G | NEC |
获取价格 |
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
UPA1770G-A | NEC |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Meta | |
UPA1770G-E1 | RENESAS |
获取价格 |
UPA1770G-E1 | |
UPA1770G-E1-AT | RENESAS |
获取价格 |
Power MOSFETs for Automotive, SOP, / | |
UPA1770G-E2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,6A I(D),SO | |
UPA1772 | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOSFET | |
UPA1772G | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOSFET | |
UPA1772G-A | RENESAS |
获取价格 |
8A, 30V, 0.034ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8 |