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UPA1793G PDF预览

UPA1793G

更新时间: 2024-02-15 00:54:03
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
12页 120K
描述
SWITCHING N- AND P-CHANNEL POWER MOS FET

UPA1793G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.2配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:0.072 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e6元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Bismuth (Sn98Bi2)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UPA1793G 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µPA1793  
SWITCHING  
N- AND P-CHANNEL POWER MOS FET  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The µPA1793 is N- and P-Channel MOS Field Effect Transistors  
8
5
1
2
; Source 1  
; Gate 1  
designed for Motor Drive application.  
N-Channel  
P-Channel  
7, 8; Drain 1  
FEATURES  
3
4
; Source 2  
; Gate 2  
Low on-state resistance  
5, 6; Drain 2  
N-Channel RDS(on)1 = 69 mMAX. (VGS = 4.5 V, ID = 1.5 A)  
RDS(on)2 = 72 mMAX. (VGS = 4.0 V, ID = 1.5 A)  
RDS(on)3 = 107 mMAX. (VGS = 2.5 V, ID = 1.0 A)  
P-Channel RDS(on)1 = 115 mMAX. (VGS = –4.5 V, ID = –1.5 A)  
RDS(on)2 = 120 mMAX. (VGS = –4.0 V, ID = –1.5 A)  
RDS(on)3 = 190 mMAX. (VGS = –2.5 V, ID = –1.0 A)  
Low input capacitance  
6.0 ±0.3  
4.4  
1
4
5.37 Max.  
0.8  
0.5 ±0.2  
0.10  
1.27 0.78 Max.  
+0.10  
–0.05  
0.40  
0.12 M  
N-Channel Ciss = 160 pF TYP.  
P-Channel Ciss = 370 pF TYP.  
Built-in G-S protection diode  
Small and surface mount package (Power SOP8)  
EQUIVALENT CIRCUIT  
ORDERING INFORMATION  
Drain  
Drain  
PART NUMBER  
PACKAGE  
Body  
Diode  
Body  
Diode  
µPA1793G  
Power SOP8  
Gate  
Gate  
Gate  
Gate  
Protection  
Diode  
Protection  
Diode  
Source  
Source  
N-Channel  
P-Channel  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. G16059EJ1V0DS00 (1st edition)  
Date Published September 2002 NS CP(K)  
Printed in Japan  
2002  
©

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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSSOP