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UPA1807GR-9JG PDF预览

UPA1807GR-9JG

更新时间： 2024-09-23 23:39:35
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
6页 66K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO

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中文翻译

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UPA1807GR-9JG 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：TSSOP包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.37
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：12 A
最大漏源导通电阻：0.016 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：48 A认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

UPA1807GR-9JG 数据手册

 浏览型号UPA1807GR-9JG的Datasheet PDF文件第2页浏览型号UPA1807GR-9JG的Datasheet PDF文件第3页浏览型号UPA1807GR-9JG的Datasheet PDF文件第4页浏览型号UPA1807GR-9JG的Datasheet PDF文件第5页浏览型号UPA1807GR-9JG的Datasheet PDF文件第6页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µPA1807  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The µPA1807 is a switching device, which can be driven  
directly by a 4.0 V power source.  
8
5
This device features a low on-state resistance and  
excellent switching characteristics, and is suitable for  
applications such as DC/DC converters and power  
management of notebook computers and so on.  
1, 2, 3 : Source  
1.2 MAX.  
4
: Gate  
1.0 ±0.05  
5, 6, 7, 8: Drain  
0.25  
+5°  
–3°  
FEATURES  
3°  
0.5  
• 4.0 V drive available  
0.1 ±0.05  
+0.15  
–0.1  
0.6  
1
4
• Low on-state resistance  
RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 6.0 A)  
RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)  
RDS(on)3 = 16 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)  
• Built-in G-S protection diode against ESD  
6.4 ±0.2  
4.4 ±0.1  
3.15 ±0.15  
3.0 ±0.1  
1.0 ±0.2  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
0.65  
0.8 MAX.  
0.1  
+0.03  
–0.08  
µPA1807GR-9JG  
Power TSSOP8  
0.27  
0.10 M  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
30  
±20  
V
Drain  
V
A
±12  
Body  
Diode  
±48  
A
Gate  
Total Power Dissipation Note2  
2.0  
W
°C  
°C  
Channel Temperature  
Tch  
150  
Gate  
Protection  
Diode  
Storage Temperature  
Tstg  
−55 to +150  
Source  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. G16249EJ1V0DS00 (1st edition)  
Date Published August 2002 NS CP(K)  
Printed in Japan  
©
2002  
123456

中文翻译

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UPA1807GR-9JG-E1-AT RENESAS

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UPA1808GR-9JG NEC

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UPA1808GR-9JG-E1 RENESAS

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 		UPA1808GR-9JG-E1
UPA1808GR-9JG-E1-AT RENESAS

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 		TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9.5A I(D),TSSOP
UPA1808GR-9JG-E2-AT RENESAS

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 		TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9.5A I(D),TSSOP
UPA1809 NEC

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