是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TSSOP |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.38 | Is Samacsys: | N |
其他特性: | ESD PROTECTED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.032 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1804GR-9JG-E1 | RENESAS |
获取价格 |
UPA1804GR-9JG-E1 |
![]() |
UPA1804GR-9JG-E1-A | RENESAS |
获取价格 |
Nch Single Power Mosfet 30V 8.0A 23Mohm Tssop8, TSSOP, /Embossed Tape |
![]() |
UPA1804GR-9JG-E1-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSSOP |
![]() |
UPA1804GR-9JG-E2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSSOP |
![]() |
UPA1806 | NEC |
获取价格 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
![]() |
UPA1806GR-9JG | NEC |
获取价格 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
![]() |
UPA1806GR-9JG-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- |
![]() |
UPA1807 | NEC |
获取价格 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
![]() |
UPA1807GR-9JG | NEC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO |
![]() |
UPA1807GR-9JG-E1 | RENESAS |
获取价格 |
UPA1807GR-9JG-E1 |
![]() |