Datasheet > UPA1812GR-9JG

UPA1812GR-9JG

更新时间： 2024-02-28 05:40:23

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	69K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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技术参数
数据手册

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UPA1812GR-9JG 技术参数

生命周期：	Obsolete	零件包装代码：	TSSOP
包装说明：	SMALL OUTLINE, R-PDSO-G8	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (Abs) (ID)：	5 A
最大漏极电流 (ID)：	5 A	最大漏源导通电阻：	0.069 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2 W	最大脉冲漏极电流 (IDM)：	20 A
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

UPA1812GR-9JG 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1812

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1812 is a switching device which can be

driven directly by a 4.0-V power source.

The µPA1812 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

1, 5, 8 :Drain

2, 3, 6, 7:Source

1.2 MAX.

1.0±0.05

:Gate

0.25

FEATURES

+5°

–3°

3°

0.5

• Can be driven by a 4.0-V power source

• Low on-state resistance

0.1±0.05

+0.15

–0.1

0.6

•

DS(on)1

DS(on)2

DS(on)3

= 39 mΩ MAX. (V = –10 V, I = –2.5 A)

= 63 mΩ MAX. (V = –4.5 V, I = –2.5 A)

= 69 mΩ MAX. (V = –4.0 V, I = –2.5 A)

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

0.65

0.8 MAX.

0.1

µPA1812GR-9JG

Power TSSOP8

+0.03

–0.08

0.27

0.10 M

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUIT

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

–30

Drain

GSS

–20/+5

±5.0

±20

D(DC)

Body

D(pulse)

Diode

Gate

2.0

°C

Gate

150

Protection

Diode

Source

stg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 5000 mm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published October 1999 NS CP(K)

Printed in Japan

D12967EJ1V0DS00 (1st edition)

The mark ★ shows major revised points.

1997, 1999

12 3 4 5 6 7 8

中文翻译

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与UPA1812GR-9JG相关器件

型号	品牌	获取价格	描述	数据表
UPA1812GR-9JG-E1-A	RENESAS	获取价格	UPA1812GR-9JG-E1-A
UPA1813	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1813GR-9JG	RENESAS	获取价格	5000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, TSSOP-8
UPA1813GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1814	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1814GR(0)-9JG-E1-A	RENESAS	获取价格	Pch Single Power Mosfet -30V -7.0A 16Mohm Tssop8, TSSOP, /Embossed Tape
UPA1814GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1814GR-9JG-E1	RENESAS	获取价格	UPA1814GR-9JG-E1
UPA1814GR-9JG-E1-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),TSSOP
UPA1814GR-9JG-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),TSSOP

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