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UPA1815GR-9JG

更新时间： 2024-01-08 08:48:57

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	70K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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技术参数
数据手册

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UPA1815GR-9JG 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	配置：	Single
最大漏极电流 (Abs) (ID)：	7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

UPA1815GR-9JG 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1815

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1815 is a switching device which can be

driven directly by a 2.5-V power source.

The µPA1815 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

1, 5, 8 :Drain

2, 3, 6, 7:Source

1.2 MAX.

1.0±0.05

:Gate

0.25

+5°

–3°

3°

FEATURES

0.5

0.1±0.05

• Can be driven by a 2.5-V power source

• Low on-state resistance

+0.15

–0.1

0.6

DS(on)1

DS(on)2

DS(on)3

DS(on)4

= 15 mΩ MAX. (V = –4.5 V, I = –3.5 A)

= 16 mΩ MAX. (V = –4.0 V, I = –3.5 A)

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

= 19 mΩ MAX. (V = –3.3 V, I = –3.5 A)

1.0 ±0.2

= 23 mΩ MAX. (V = –2.5 V, I = –3.5 A)

ORDERING INFORMATION

PART NUMBER

PACKAGE

0.65

0.8 MAX.

0.1

+0.03

–0.08

0.27

0.10 M

µPA1815GR-9JG

Power TSSOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUIT

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

–20

±12

±7

Drain

GSS

★

D(DC)

Body

Diode

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

D(pulse)

±26

2.0

150

Gate

°C

Gate

Protection

Diode

Source

stg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 5000 mm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published August 1999 NS CP(K)

Printed in Japan

D13805EJ2V0DS00 (2nd edition)

1998, 1999

The mark ★ shows major revised points.

12 3 4 5 6 7 8

中文翻译

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与UPA1815GR-9JG相关器件

型号	品牌	获取价格	描述	数据表
UPA1815GR-9JG-E1	RENESAS	获取价格	UPA1815GR-9JG-E1
UPA1815GR-9JG-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,7A I(D),SO
UPA1815GR-9JG-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,7A I(D),SO
UPA1816	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1816GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1816GR-9JG	RENESAS	获取价格	9000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, TSSOP-8
UPA1816GR-9JG-E2	RENESAS	获取价格	UPA1816GR-9JG-E2
UPA1816GR-9JG-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,9A I(D),SO
UPA1817	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1817GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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