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UPA1815GR-9JG PDF预览

UPA1815GR-9JG

更新时间: 2024-01-10 13:38:08
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 70K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

UPA1815GR-9JG 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:,Reach Compliance Code:compliant
风险等级:5.61配置:Single
最大漏极电流 (Abs) (ID):7 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

UPA1815GR-9JG 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
PA1815  
µ
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1815 is a switching device which can be  
driven directly by a 2.5-V power source.  
8
5
The µPA1815 features a low on-state resistance and  
excellent switching characteristics, and is suitable for  
applications such as power switch of portable machine  
and so on.  
1, 5, 8 :Drain  
2, 3, 6, 7:Source  
1.2 MAX.  
1.0±0.05  
4
:Gate  
0.25  
+5°  
–3°  
3°  
FEATURES  
0.5  
0.1±0.05  
Can be driven by a 2.5-V power source  
Low on-state resistance  
+0.15  
–0.1  
0.6  
1
4
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
DS(on)4  
R
GS  
D
= 15 mMAX. (V = –4.5 V, I = –3.5 A)  
GS  
D
= 16 mMAX. (V = –4.0 V, I = –3.5 A)  
6.4 ±0.2  
4.4 ±0.1  
3.15 ±0.15  
3.0 ±0.1  
GS  
D
= 19 mMAX. (V = –3.3 V, I = –3.5 A)  
1.0 ±0.2  
GS  
D
= 23 mMAX. (V = –2.5 V, I = –3.5 A)  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
0.65  
0.8 MAX.  
0.1  
+0.03  
–0.08  
0.27  
0.10 M  
µPA1815GR-9JG  
Power TSSOP8  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
V
V
–20  
±12  
±7  
V
V
Drain  
GSS  
D(DC)  
I
A
Body  
Diode  
Drain Current (pulse) Note1  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
D(pulse)  
I
±26  
2.0  
150  
A
Gate  
T
P
W
°C  
Gate  
Protection  
Diode  
ch  
T
Source  
stg  
T
–55 to +150 °C  
Notes 1. PW 10 µs, Duty Cycle 1 %  
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published August 1999 NS CP(K)  
Printed in Japan  
D13805EJ2V0DS00 (2nd edition)  
1998, 1999  
©
The mark shows major revised points.  

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