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UPA1814GR-9JG PDF预览

UPA1814GR-9JG

更新时间： 2024-02-29 20:10:44
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 68K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA1814GR-9JG 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TSSOP
包装说明：POWER, TSSOP-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.38Is Samacsys：N
其他特性：ESD PROTECTED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：7 A
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.027 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA1814GR-9JG 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
PA1814  
µ
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1814 is a switching device which can be  
driven directly by a 4 V power source.  
8
5
The µPA1814 features a low on-state resistance and  
excellent switching characteristics, and is suitable for  
applications such as power switch of portable machine  
and so on.  
1, 5, 8 :Drain  
2, 3, 6, 7:Source  
1.2 MAX.  
1.0±0.05  
4
:Gate  
0.25  
FEATURES  
+5°  
–3°  
3°  
0.5  
• Can be driven by a 4 V power source  
• Low on-state resistance  
0.1±0.05  
+0.15  
–0.1  
★
0.6  
1
4
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 16 mΩ MAX. (V = –10 V, I = –3.5 A)  
GS  
D
= 24 mΩ MAX. (V = –4.5 V, I = –3.5 A)  
GS  
D
= 27 mΩ MAX. (V = –4.0 V, I = –3.5 A)  
6.4 ±0.2  
4.4 ±0.1  
3.15 ±0.15  
3.0 ±0.1  
• Built-in G-S protection diode against ESD  
1.0 ±0.2  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
0.65  
0.8 MAX.  
0.1  
µPA1814GR-9JG  
Power TSSOP8  
+0.03  
–0.08  
0.27  
0.10 M  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note1  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
V
V
–30  
±20  
V
V
Drain  
GSS  
D(DC)  
I
±7.0  
±28  
2.0  
A
Body  
D(pulse)  
I
A
Diode  
Gate  
T
P
W
°C  
Gate  
ch  
T
150  
Protection  
Diode  
Source  
stg  
T
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %  
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published June 1999 NS CP(K)  
Printed in Japan  
D13804EJ1V0DS00 (1st edition)  
1998, 1999  
©
The mark ★ shows major revised points.  
12345678

中文翻译

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 		P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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