UPA1820GR-9JG

更新时间： 2024-09-23 22:26:03

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
6页	67K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA1820GR-9JG 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1820

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA1820 is a switching device which can be

driven directly by a 2.5 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as DC/DC Converters and power

management of notebook computers and so on.

:Drain1

1,2,3 :Source

1.2 MAX.

1.0±0.05

2, 3 :Source1

tete1

6, 7

:Gate2

:Source2

:Drain2

5,6,7,8 :Drain

0.25

FEATURES

+5°

–3°

3°

0.5

• 2.5 V drive available

0.1±0.05

+0.15

–0.1

0.6

• Low on-state resistance

R^DS(on)1= 8.6 mΩ MAX. (V^GS= 4.5 V, I^D= 6.0 A)

R^DS(on)2= 8.8 mΩ MAX. (V^GS= 4.0 V, I^D= 6.0 A)

R^DS(on)3= 12 mΩ MAX. (V^GS= 2.5 V, I^D= 6.0 A)

• Built-in G-S protection diode against ESD

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

0.65

0.8 MAX.

0.1

µPA1820GR-9JG

Power TSSOP8

+0.03

–0.08

0.27

0.10 M

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±12

±48

2.0

Drain

Drain Current (pulse) ^Note1

Body

Diode

Gate

Note2

Total Power Dissipation

°C

Gate

Channel Temperature

Storage Temperature

T^ch

150

Protection

Diode

T^stg

−55 to +150

°C

Source

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 5000 mm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G16274EJ1V0DS00 (1st edition)

Date Published October 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6

中文翻译

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与UPA1820GR-9JG相关器件

型号	品牌	获取价格	描述	数据表
UPA1830	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830GR-9JG-E1	RENESAS	获取价格	UPA1830GR-9JG-E1
UPA1830GR-9JG-E2	RENESAS	获取价格	UPA1830GR-9JG-E2
UPA1830GR-9JG-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,9A I(D),TSSOP
UPA1840	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1840GR-9JG	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1840GR-9JG-A	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.2A I(D),TSSOP
UPA1840GR-9JG-E1	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.2A I(D),TSSOP
UPA1850	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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