Datasheet > UPA1818GR-9JG-A

UPA1818GR-9JG-A

更新时间： 2024-09-24 20:06:55

品牌	Logo	应用领域
日电电子 - NEC		ISM频段开关光电二极管晶体管
页数	文件大小	规格书
8页	75K
描述
Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, TSSOP-8

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中文翻译

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技术参数
数据手册

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UPA1818GR-9JG-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TSSOP	包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.2
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	10 A	最大漏源导通电阻：	0.025 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e6	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

UPA1818GR-9JG-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1818

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The µ PA1818 is a switching device which can be

PACKAGE DRAWING (Unit: mm)

driven directly by a 2.5 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power management of notebook

computers and so on.

1, 2, 3 :Source

:Gate

5, 6, 7, 8:Drain

1.2 MAX.

1.0±0.05

0.25

FEATURES

+5°

–3°

• 2.5 V drive available

3°

0.5

• Low on-state resistance

0.1±0.05

+0.15

–0.1

0.6

R^DS(on)1= 15.2 mΩ MAX. (V^GS= −4.5 V, I^D= −5.0 A)

R^DS(on)2= 16 mΩ MAX. (V^GS= −4.0 V, I^D= −5.0 A)

R^DS(on)3= 25 mΩ MAX. (V^GS= −2.5 V, I^D= −5.0 A)

• Built-in G-S protection diode against ESD

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1818GR-9JG

Power TSSOP8

0.65

0.8 MAX.

0.1

+0.03

–0.08

0.27

0.10 M

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

−20

m ¹²

m ¹⁰

Drain

Body

Diode

Gate

Total Power Dissipation ^Note2

2.0

°C

Gate

Channel Temperature

T^ch

150

Protection

Diode

Storage Temperature

T^stg

−55 to +150

Source

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 5000 mm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

2002

Document No.

Date Published September 2002 NS CP(K)

Printed in Japan

G16254EJ1V0DS00 (1st edition)

12 3 4 5 6 7 8

中文翻译

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与UPA1818GR-9JG-A相关器件

型号	品牌	获取价格	描述	数据表
UPA1819	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1819GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1820	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1820GR-9JG	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830GR-9JG-E1	RENESAS	获取价格	UPA1830GR-9JG-E1
UPA1830GR-9JG-E2	RENESAS	获取价格	UPA1830GR-9JG-E2
UPA1830GR-9JG-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,9A I(D),TSSOP
UPA1840	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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