Datasheet > UPA1819

UPA1819

更新时间： 2024-02-27 17:25:45

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	78K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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数据手册

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UPA1819 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1819

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µ PA1819 is a switching device that can be driven

directly by a 4.0 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power management of notebook

computers and so on.

:Drain1

1, 2, 3: Source

1.2 MAX.

1.0±0.05

2, 3 :Source1

:G tete

a 1

6, 7

:Gate2

:Source2

:Drain2

5, 6, 7, 8: Drain

0.25

FEATURES

+5°

–3°

3°

0.5

• 4.0 V drive available

0.1±0.05

+0.15

–0.1

0.6

• Low on-state resistance

R^DS(on)1= 12 mΩ MAX. (V^GS= −10 V, I^D= −6.0 A)

R^DS(on)2= 18.5 mΩ MAX. (V^GS= −4.5 V, I^D= −6.0 A)

R^DS(on)3= 22 mΩ MAX. (V^GS= −4.0 V, I^D= −6.0 A)

• Built-in G-S protection diode against ESD

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

0.65

0.8 MAX.

0.1

µPA1819GR-9JG

Power TSSOP8

+0.03

–0.08

0.27

0.10 M

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

−30

m20

m12

m48

2.0

Drain

Body

Diode

Gate

Total Power Dissipation ^Note2

°C

Channel Temperature

T^ch

150

Gate

Protection

Diode

Storage Temperature

T^stg

−55 to +150

°C

Source

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 5000 mm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G16267EJ1V0DS00 (1st edition)

Date Published September 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7 8

中文翻译

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与UPA1819相关器件

型号	品牌	获取价格	描述	数据表
UPA1819GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1820	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1820GR-9JG	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830GR-9JG-E1	RENESAS	获取价格	UPA1830GR-9JG-E1
UPA1830GR-9JG-E2	RENESAS	获取价格	UPA1830GR-9JG-E2
UPA1830GR-9JG-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,9A I(D),TSSOP
UPA1840	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1840GR-9JG	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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