Datasheet > UPA1855

UPA1855

更新时间： 2024-09-24 04:26:55

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	72K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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UPA1855 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1855

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1855 is a switching device which can be

driven directly by a 2.5 V power source.

The µPA1855 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

:Drain1

1.2 MAX.

1.0±0.05

2, 3 :Source1

:Gate1

:Gate2

0.25

6, 7 :Source2

:Drain2

FEATURES

• Can be driven by a 2.5 V power source

• Low on-state resistance

R^DS(on)1= 23 mΩ MAX. (V^GS= 4.5 V, I^D= 3.0 A)

R^DS(on)2= 24 mΩ MAX. (V^GS= 4.0 V, I^D= 3.0 A)

R^DS(on)3= 29 mΩ MAX. (V^GS= 2.5 V, I^D= 3.0 A)

• Built-in G-S protection diode against ESD

+5°

–3°

3°

0.5

0.1±0.05

+0.15

–0.1

0.6

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1855GR-9JG

Power TSSOP8

0.65

0.8 MAX.

0.1

+0.03

–0.08

0.27

0.10 M

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±12

EQUIVALENT CIRCUIT

Drain1

Drain2

±6.0

±24

Body

Diode

2.0

°C

Diode

Gate1

Gate2

T^ch

150

T^stg

–55 to +150

Gate

Protection

Diode

Protection

Diode

Source1

Source2

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 5000 mm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2001 NS CP(K)

Printed in Japan

D13454EJ2V0DS00 (2nd edition)

The mark ★ shows major revised points.

1998, 1999

12 3 4 5 6 7 8

中文翻译

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与UPA1855相关器件

型号	品牌	获取价格	描述	数据表
UPA1855GR-9JG	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA1856	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1856GR(0)-9JG-E1-AT	RENESAS	获取价格	Pch Dual Power Mosfet -20V -4.5A 45Mohm Tssop8, TSSOP, /Embossed Tape
UPA1856GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1856GR-9JG	RENESAS	获取价格	4.5A, 20V, 0.077ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWER, TSSOP-8
UPA1856GR-9JG-E1-A	RENESAS	获取价格	Pch Dual Power MOSFET -20V -4.5A 45mohm TSSOP8
UPA1856GR-9JG-E1-AT	RENESAS	获取价格	Pch Dual Power MOSFET -20V -4.5A 45mohm TSSOP8
UPA1856GR-9JG-E2	RENESAS	获取价格	UPA1856GR-9JG-E2
UPA1856GR-9JG-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,4.5A I(D),TSSOP
UPA1857	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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