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UPA1854GR-9JG

更新时间： 2024-01-17 22:19:10
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 66K
描述
TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 3A I(D) | SO

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中文翻译

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UPA1854GR-9JG 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TSSOP
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.38配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：12 V最大漏极电流 (Abs) (ID)：3 A
最大漏极电流 (ID)：3 A最大漏源导通电阻：0.105 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA1854GR-9JG 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µPA1854  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1854 is a switching device which can be  
driven directly by a 2.5-V power source.  
8
5
The µPA1854 features a low on-state resistance and  
excellent switching characteristics, and is suitable for  
applications such as power switch of portable machine  
and so on.  
1
:Drain1  
1.2 MAX.  
1.0±0.05  
2, 3 :Source1  
4
5
:Gate1  
:Gate2  
0.25  
6, 7 :Source2  
:Drain2  
8
FEATURES  
• Can be driven by a 2.5-V power source  
• Low on-state resistance  
RDS(on)1 = 60 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)  
RDS(on)2 = 70 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)  
RDS(on)3 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)  
• Built-in G-S protection diode against ESD  
+5°  
–3°  
3°  
0.5  
0.1±0.05  
+0.15  
–0.1  
0.6  
1
4
6.4 ±0.2  
4.4 ±0.1  
3.15 ±0.15  
3.0 ±0.1  
1.0 ±0.2  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
µPA1854GR-9JG  
Power TSSOP8  
0.65  
0.8 MAX.  
0.1  
+0.03  
–0.08  
0.27  
0.10 M  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note1  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
–12  
V
V
EQUIVALENT CIRCUIT  
–10/+5  
Drain1  
Drain2  
3.0  
12  
A
m
A
m
Body  
Body  
Diode  
2.0  
150  
W
°C  
°C  
Diode  
Gate1  
Gate2  
Tch  
Tstg  
–55 to +150  
Gate  
Gate  
Protection  
Diode  
Protection  
Diode  
Source1  
Source2  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %  
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published May 2001 NS CP(K)  
Printed in Japan  
D13295EJ2V0DS00 (2nd edition)  
The mark ★ shows major revised points.  
1998, 1999  
©
12345678

中文翻译

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