是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | TSSOP | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.36 |
Is Samacsys: | N | 其他特性: | ESD PROTECTED |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 4.5 A | 最大漏源导通电阻: | 0.077 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1856GR-9JG-E1-A | RENESAS |
获取价格 |
Pch Dual Power MOSFET -20V -4.5A 45mohm TSSOP8 | |
UPA1856GR-9JG-E1-AT | RENESAS |
获取价格 |
Pch Dual Power MOSFET -20V -4.5A 45mohm TSSOP8 | |
UPA1856GR-9JG-E2 | RENESAS |
获取价格 |
UPA1856GR-9JG-E2 | |
UPA1856GR-9JG-E2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,4.5A I(D),TSSOP | |
UPA1857 | NEC |
获取价格 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1857GR-9JG | NEC |
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1857GR-9JG | RENESAS |
获取价格 |
3.8A, 60V, 0.095ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWER, TSSOP-8 | |
UPA1857GR-9JG-E1 | RENESAS |
获取价格 |
UPA1857GR-9JG-E1 | |
UPA1857GR-9JG-E1-A | RENESAS |
获取价格 |
Nch Dual Power Mosfet 60V 3.8A 67.0Mohm Tssop8, TSSOP, /Embossed Tape | |
UPA1857GR-9JG-E1-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,3.8A I(D),TSSOP |