UPA1870GR-9JG

更新时间： 2024-01-31 18:24:49

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	72K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA1870GR-9JG 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1870

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA1870 is a switching device which can be

driven directly by a 2.5-V power source.

The µPA1870 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

:Drain1

1.2 MAX.

1.0±0.05

2, 3 :Source1

:Gate1

:Gate2

0.25

6, 7 :Source2

:Drain2

+5°

–3°

FEATURES

3°

0.5

• Can be driven by a 2.5-V power source

• Low on-state resistance

0.1±0.05

+0.15

–0.1

0.6

R^DS(on)1= 20.0 mΩ MAX. (V^GS= 4.5 V, I^D= 3.0 A)

R^DS(on)2= 21.0 mΩ MAX. (V^GS= 4.0 V, I^D= 3.0 A)

R^DS(on)3= 27.0 mΩ MAX. (V^GS= 2.5 V, I^D= 3.0 A)

• Built-in G-S protection diode against ESD

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

0.65

0.8 MAX.

0.1

µ PA1870GR-9JG

Power TSSOP8

+0.03

0.27

0.10 M

–0.08

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^{Note 1}

Total Power Dissipation ^{Note 2}

Channel Temperature

Storage Temperature

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±12

±6.0

±80

2.0

Drain1

Drain2

Body

Diode

Body

Diode

Gate1

Gate2

Gate

Protection

Diode

Gate

Protection

Diode

°C

Source1

Source2

T^ch

150

T^stg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 50 cm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published April 2001 NS CP(K)

Printed in Japan

G14886EJ2V0DS00 (2nd edition)

The mark ★ shows major revised points.

2000

12 3 4 5 6 7 8

中文翻译

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与UPA1870GR-9JG相关器件

型号	品牌	获取价格	描述	数据表
UPA1871	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1871GR-9JG	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1871GR-9JG	RENESAS	获取价格	6A, 30V, 0.038ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWER, TSSOP-8
UPA1871GR-9JG-E1	RENESAS	获取价格	UPA1871GR-9JG-E1
UPA1871GR-9JG-E1-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,30V V(BR)DSS,6A I(D),TSSOP
UPA1871GR-9JG-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,30V V(BR)DSS,6A I(D),TSSOP
UPA1871GR-9JG-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,30V V(BR)DSS,6A I(D),TSSOP
UPA1872	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1872B	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1872BGR-9JG	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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