是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | POWER, TSSOP-8 | Reach Compliance Code: | compliant |
风险等级: | 5.72 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 0.038 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e6 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
UPA1858GR-9JG-E1-AT | RENESAS | TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,5A I(D),TSSOP |
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UPA1858GR-9JG-E2 | RENESAS | UPA1858GR-9JG-E2 |
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UPA1858GR-9JG-E2-AT | RENESAS | TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,5A I(D),TSSOP |
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UPA1870 | NEC | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1870B | NEC | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1870BGR-9JG | NEC | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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