Datasheet > UPA1872BGR-9JG-E1-A

UPA1872BGR-9JG-E1-A

更新时间： 2024-01-23 13:42:49

品牌	Logo	应用领域
瑞萨 - RENESAS		ISM频段开关脉冲光电二极管晶体管
页数	文件大小	规格书
7页	165K
描述
Power Field-Effect Transistor, 10A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, POWER TSSOP-8

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UPA1872BGR-9JG-E1-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TSSOP	包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.46
配置：	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	10 A	最大漏源导通电阻：	0.018 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e6	元件数量：	2
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	80 A
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

UPA1872BGR-9JG-E1-A 数据手册

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DATA SHEET

^{MOS FIELD E}µ^FFEP^CTA^TR1^A8^NS7^IS2^TOB^R

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA1872B is a switching device, which can be driven

directly by a 2.5 V power source.

:Drain1

The µ PA1872B features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

1.2 MAX.

1.0±0.05

2, 3 :Source1

:Gate1

:Gate2

0.25

6, 7 :Source2

:Drain2

+5°

–3°

3°

0.5

0.1±0.05

+0.15

–0.1

FEATURES

• 2.5 V drive available

0.6

• Low on-state resistance

6.4 ±0.2

4.4 ±0.1

R^DS(on)1= 13.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)

R^DS(on)2= 13.5 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A)

R^DS(on)3= 15.5 mΩ MAX. (VGS = 3.1 V, ID = 5.0 A)

R^DS(on)4= 18.0 mΩ MAX. (VGS = 2.5 V, ID = 5.0 A)

• Built-in G-S protection diode against ESD

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

0.65

0.8 MAX.

0.1

+0.03

–0.08

0.27

0.10 M

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA1872BGR-9JG

Power TSSOP8

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) ^{Note 1}

Drain Current (pulse) ^{Note 2}

Total Power Dissipation ^{Note 1}

Channel Temperature

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T

20.0

±12.0

Drain1

Drain2

±10.0

Body

Diode

±80.0

Diode

Gate1

Gate2

Gate

2.0

°C

Gate

Protection

Diode

Protection

Diode

Tch

150

Source1

Source2

Storage Temperature

T^stg

–55 to +150

Notes 1. Mounted on ceramic board of 50 cm²x 1.1 mm

2. PW ≤ 10 µs, Duty Cycle ≤ 1%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16742EJ1V0DS00 (1st edition)

Date Published April 2004 NS CP(K)

Printed in Japan

2004

12 3 4 5 6 7

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与UPA1872BGR-9JG-E1-A相关器件

型号	品牌	描述	获取价格	数据表
UPA1872BGR-9JG-E2-A	RENESAS	Power Field-Effect Transistor, 10A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Met	获取价格
UPA1872GR-9JG	NEC	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	获取价格
UPA1873	NEC	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	获取价格
UPA1873GR-9JG	NEC	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	获取价格
UPA1873GR-9JG	RENESAS	6A, 20V, 0.029ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TSSOP-8	获取价格
UPA1873GR-9JG-E1	RENESAS	UPA1873GR-9JG-E1	获取价格

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