Datasheet > UPA1858

UPA1858

更新时间： 2022-12-09 01:08:52

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	77K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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UPA1858 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA1858

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA1858 is a switching device, which can be

driven directly by a 2.5 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power management of portable

machine and so on.

2, 3

6, 7

:Drain1

:Source1

:Gate1

:Gate2

:Source2

:Drain2

1.2 MAX.

1.0±0.05

0.25

FEATURES

+5°

–3°

3°

0.5

• 2.5 V drive available

0.1±0.05

+0.15

–0.1

0.6

• Low on-state resistance

R^DS(on)1= 24.5 mΩ MAX. (V^GS= −4.5 V, I^D= −2.5 A)

R^DS(on)2= 25.5 mΩ MAX. (V^GS= −4.0 V, I^D= −2.5 A)

R^DS(on)3= 38 mΩ MAX. (V^GS= −2.5 V, I^D= −2.5 A)

• Built-in G-S protection diode against ESD

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

0.65

0.8 MAX.

0.1

µPA1858GR-9JG

Power TSSOP8

+0.03

–0.08

0.27

0.10 M

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUITS

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation (2 units) ^Note2

Channel Temperature

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

−20

m12

Drain 1

Drain 2

m5.0

m20

2.0

Body

Diode

Gate 1

Gate 2

Diode

°C

Gate

Protection

Diode

Gate

Protection

Diode

T^ch

150

Source 1

Source 2

Storage Temperature

T^stg

−55 to +150

°C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 5000 mm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.G16276EJ1V0DS00 (1st edition)

Date Published October 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7 8

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UPA1858GR-9JG	NEC	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	获取价格
UPA1858GR-9JG-A	RENESAS	5000mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, TSSOP-8	获取价格
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UPA1858GR-9JG-E2	RENESAS	UPA1858GR-9JG-E2	获取价格
UPA1858GR-9JG-E2-AT	RENESAS	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,5A I(D),TSSOP	获取价格