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UPA1855GR-9JG

更新时间： 2024-01-17 09:31:39
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 72K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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UPA1855GR-9JG 技术参数

生命周期：Active零件包装代码：TSSOP
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.38Is Samacsys：N
其他特性：ESD PROTECTED配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.029 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA1855GR-9JG 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µPA1855  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1855 is a switching device which can be  
driven directly by a 2.5 V power source.  
8
5
The µPA1855 features a low on-state resistance and  
excellent switching characteristics, and is suitable for  
applications such as power switch of portable machine  
and so on.  
1
:Drain1  
1.2 MAX.  
1.0±0.05  
2, 3 :Source1  
4
5
:Gate1  
:Gate2  
0.25  
6, 7 :Source2  
:Drain2  
8
FEATURES  
• Can be driven by a 2.5 V power source  
• Low on-state resistance  
RDS(on)1 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)  
RDS(on)2 = 24 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)  
RDS(on)3 = 29 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)  
• Built-in G-S protection diode against ESD  
+5°  
–3°  
3°  
0.5  
0.1±0.05  
+0.15  
–0.1  
0.6  
1
4
6.4 ±0.2  
4.4 ±0.1  
3.15 ±0.15  
3.0 ±0.1  
1.0 ±0.2  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
µPA1855GR-9JG  
Power TSSOP8  
0.65  
0.8 MAX.  
0.1  
+0.03  
–0.08  
0.27  
0.10 M  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note1  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
20  
±12  
V
V
EQUIVALENT CIRCUIT  
Drain1  
Drain2  
±6.0  
A
±24  
A
Body  
Body  
Diode  
2.0  
W
°C  
°C  
Diode  
Gate1  
Gate2  
Tch  
150  
Tstg  
–55 to +150  
Gate  
Gate  
Protection  
Diode  
Protection  
Diode  
Source1  
Source2  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %  
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published May 2001 NS CP(K)  
Printed in Japan  
D13454EJ2V0DS00 (2nd edition)  
The mark ★ shows major revised points.  
1998, 1999  
©
12345678

中文翻译

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