Datasheet > UPA1840GR-9JG-A

UPA1840GR-9JG-A

更新时间： 2024-02-18 10:50:40

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	64K
描述
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.2A I(D),TSSOP

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UPA1840GR-9JG-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1840

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

ORDERING INFORMATION

PART NUMBER

DESCRIPTION

The µPA1840 is N-channel MOS FET device that

features a low on-state resistance and excellent

switching characteristics, and designed for high voltage

applications such as DC/DC converter.

PACKAGE

µPA1840GR-9JG

Power TSSOP8

FEATURES

• High voltage rating V^DSS= 200 V

• Power TSSOP8 package (Single circuit)

• Gate voltage rating ±30 V

• Low on-state resistance

R^DS(on)= 0.5 Ω MAX. (V^GS= 10 V, I^D= 1.5 A)

• Low input capacitance

C^iss= 320 pF TYP. (V^DS= 10 V, V^GS= 0 V)

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

200

±30

±2.2

±8.8

2.0

Total Power Dissipation ^Note2

°C

Channel Temperature

Tch

150

Storage Temperature

T^stg

–55 to +150

°C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 5000mm²x 1.1

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published November 2001 NS CP(K)

Printed in Japan

G14758EJ1V0DS00 (1st edition)

2000

12 3 4 5 6 7 8

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