是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | TSSOP | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 12 V |
最大漏极电流 (ID): | 9 A | 最大漏源导通电阻: | 0.0225 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1816GR-9JG-E2 | RENESAS |
获取价格 |
UPA1816GR-9JG-E2 | |
UPA1816GR-9JG-E2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,9A I(D),SO | |
UPA1817 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1817GR-9JG | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1818 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1818GR-9JG | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1818GR-9JG-A | RENESAS |
获取价格 |
10000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, TSSOP-8 | |
UPA1818GR-9JG-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal- | |
UPA1819 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1819GR-9JG | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |