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UPA1818GR-9JG

更新时间： 2024-02-01 23:53:30

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	77K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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技术参数
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UPA1818GR-9JG 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	POWER, TSSOP-8	Reach Compliance Code：	compliant
风险等级：	5.84	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	10 A
最大漏源导通电阻：	0.025 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e6
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	10
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

UPA1818GR-9JG 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1818

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The µ PA1818 is a switching device which can be

PACKAGE DRAWING (Unit: mm)

driven directly by a 2.5 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power management of notebook

computers and so on.

1, 2, 3 :Source

:Gate

5, 6, 7, 8:Drain

1.2 MAX.

1.0±0.05

0.25

FEATURES

+5°

–3°

• 2.5 V drive available

3°

0.5

• Low on-state resistance

0.1±0.05

+0.15

–0.1

0.6

R^DS(on)1= 15.2 mΩ MAX. (V^GS= −4.5 V, I^D= −5.0 A)

R^DS(on)2= 16 mΩ MAX. (V^GS= −4.0 V, I^D= −5.0 A)

R^DS(on)3= 25 mΩ MAX. (V^GS= −2.5 V, I^D= −5.0 A)

• Built-in G-S protection diode against ESD

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1818GR-9JG

Power TSSOP8

0.65

0.8 MAX.

0.1

+0.03

–0.08

0.27

0.10 M

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

−20

m ¹²

m ¹⁰

Drain

Body

Diode

Gate

Total Power Dissipation ^Note2

2.0

°C

Gate

Channel Temperature

T^ch

150

Protection

Diode

Storage Temperature

T^stg

−55 to +150

Source

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 5000 mm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

2002

Document No.

Date Published September 2002 NS CP(K)

Printed in Japan

G16254EJ1V0DS00 (1st edition)

12 3 4 5 6 7 8

中文翻译

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与UPA1818GR-9JG相关器件

型号	品牌	获取价格	描述	数据表
UPA1818GR-9JG-A	RENESAS	获取价格	10000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, TSSOP-8
UPA1818GR-9JG-A	NEC	获取价格	Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-
UPA1819	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1819GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1820	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1820GR-9JG	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830GR-9JG	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1830GR-9JG-E1	RENESAS	获取价格	UPA1830GR-9JG-E1
UPA1830GR-9JG-E2	RENESAS	获取价格	UPA1830GR-9JG-E2

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