DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1808
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The µPA1808 is a switching device, which can be driven
directly by a 4.0 V power source.
8
5
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC converters and power
management of notebook computers and so on.
1, 2, 3 : Source
1.2 MAX.
4
: Gate
1.0 ±0.05
5, 6, 7, 8: Drain
0.25
+5°
–3°
FEATURES
3°
0.5
•
•
4.0 V drive available
0.1 ±0.05
+0.15
–0.1
0.6
1
4
Low on-state resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 23 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
RDS(on)3 = 26 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A)
Built-in G-S protection diode against ESD
6.4 ±0.2
4.4 ±0.1
3.15 ±0.15
3.0 ±0.1
1.0 ±0.2
•
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.65
0.8 MAX.
0.1
+0.03
–0.08
µPA1808GR-9JG
Power TSSOP8
0.27
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT
30
±20
V
Drain
V
A
±9.5
Body
Diode
±38
A
Gate
Total Power Dissipation Note2
2.0
W
°C
°C
Channel Temperature
Tch
150
Gate
Protection
Diode
Storage Temperature
Tstg
−55 to +150
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16250EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2002