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UPA1803GR-9JG-E2 PDF预览

UPA1803GR-9JG-E2

更新时间: 2024-01-02 06:06:10
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 154K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSSOP

UPA1803GR-9JG-E2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92配置:Single
最大漏极电流 (Abs) (ID):8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

UPA1803GR-9JG-E2 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
μPA1803  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The μ PA1803 is a switching device which can be  
driven directly by a 4.5 V power source.  
8
5
The μ PA1803 features a low on-state resistance and  
excellent switching characteristics, and is suitable for  
applications such as power switch of portable machine  
and so on.  
1, 5, 8 :Drain  
2, 3, 6, 7:Source  
1.2 MAX.  
1.0±0.05  
4
:Gate  
0.25  
+5°  
–3°  
3°  
0.5  
FEATURES  
0.1±0.05  
+0.15  
–0.1  
0.6  
Can be driven by a 4.5 V power source  
Low on-state resistance  
1
4
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 4.0 A)  
RDS(on)2 = 16 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)  
Built-in G-S protection diode against ESD  
6.4 ±0.2  
4.4 ±0.1  
3.15 ±0.15  
3.0 ±0.1  
1.0 ±0.2  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
0.65  
0.8 MAX.  
0.1  
+0.03  
–0.08  
μ PA1803GR-9JG  
Power TSSOP8  
0.27  
0.10 M  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note1  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
30  
20  
V
V
Drain  
8.0  
32  
A
Body  
Diode  
Gate  
A
2.0  
150  
W
°C  
°C  
Gate  
Protection  
Diode  
Tch  
Source  
Tstg  
55 to +150  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G13803EJ3V0DS00 (3rd edition)  
Date Published April 2007 NS CP(K)  
Printed in Japan  
1998, 1999  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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