Datasheet > UPA1803GR-9JG-E2

UPA1803GR-9JG-E2

更新时间： 2024-01-24 07:06:02

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	154K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSSOP

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技术参数
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UPA1803GR-9JG-E2 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	配置：	Single
最大漏极电流 (Abs) (ID)：	8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

UPA1803GR-9JG-E2 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA1803

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The μ PA1803 is a switching device which can be

driven directly by a 4.5 V power source.

The μ PA1803 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

1, 5, 8 :Drain

2, 3, 6, 7:Source

1.2 MAX.

1.0±0.05

:Gate

0.25

+5°

–3°

3°

0.5

FEATURES

0.1±0.05

+0.15

–0.1

0.6

• Can be driven by a 4.5 V power source

• Low on-state resistance

R^DS(on)1= 12 mΩ MAX. (VGS = 10 V, ID = 4.0 A)

R^DS(on)2= 16 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)

• Built-in G-S protection diode against ESD

6.4 ±0.2

4.4 ±0.1

3.15 ±0.15

3.0 ±0.1

1.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

0.65

0.8 MAX.

0.1

+0.03

–0.08

μ PA1803GR-9JG

Power TSSOP8

0.27

0.10 M

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

VDSS

V^GSS

I^D(DC)

I^D(pulse)

Drain

8.0

Body

Diode

Gate

2.0

150

°C

Gate

Protection

Diode

T^ch

Source

T^stg

−55 to +150

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 5000 mm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G13803EJ3V0DS00 (3rd edition)

Date Published April 2007 NS CP(K)

Printed in Japan

1998, 1999

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6

中文翻译

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与UPA1803GR-9JG-E2相关器件

型号	品牌	获取价格	描述	数据表
UPA1804	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1804GR-9JG	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1804GR-9JG	RENESAS	获取价格	8000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, TSSOP-8
UPA1804GR-9JG-E1	RENESAS	获取价格	UPA1804GR-9JG-E1
UPA1804GR-9JG-E1-A	RENESAS	获取价格	Nch Single Power Mosfet 30V 8.0A 23Mohm Tssop8, TSSOP, /Embossed Tape
UPA1804GR-9JG-E1-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSSOP
UPA1804GR-9JG-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSSOP
UPA1806	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1806GR-9JG	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1806GR-9JG-A	NEC	获取价格	Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-

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