UPA1793G-A

更新时间： 2024-01-21 17:19:54

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
12页	120K
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中文翻译

获取价格

数据手册

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UPA1793G-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1793

SWITCHING

N- AND P-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µPA1793 is N- and P-Channel MOS Field Effect Transistors

; Source 1

; Gate 1

designed for Motor Drive application.

N-Channel

P-Channel

7, 8; Drain 1

FEATURES

; Source 2

; Gate 2

• Low on-state resistance

5, 6; Drain 2

N-Channel R^DS(on)1= 69 mΩ MAX. (V^GS= 4.5 V, I^D= 1.5 A)

R^DS(on)2= 72 mΩ MAX. (V^GS= 4.0 V, I^D= 1.5 A)

R^DS(on)3= 107 mΩ MAX. (V^GS= 2.5 V, I^D= 1.0 A)

P-Channel R^DS(on)1= 115 mΩ MAX. (V^GS= –4.5 V, I^D= –1.5 A)

R^DS(on)2= 120 mΩ MAX. (V^GS= –4.0 V, I^D= –1.5 A)

R^DS(on)3= 190 mΩ MAX. (V^GS= –2.5 V, I^D= –1.0 A)

• Low input capacitance

6.0 ±0.3

4.4

5.37 Max.

0.8

0.5 ±0.2

0.10

1.27 0.78 Max.

+0.10

–0.05

0.40

0.12 M

N-Channel C^iss= 160 pF TYP.

P-Channel C^iss= 370 pF TYP.

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)

EQUIVALENT CIRCUIT

ORDERING INFORMATION

Drain

PART NUMBER

PACKAGE

Body

Diode

Body

Diode

µPA1793G

Power SOP8

Gate

Protection

Diode

Protection

Diode

Source

N-Channel

P-Channel

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G16059EJ1V0DS00 (1st edition)

Date Published September 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7...12

中文翻译

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