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UPA1801GR-9JG

更新时间： 2024-02-11 08:33:20
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管功率场效应晶体管脉冲光电二极管
页数 文件大小 规格书
8页 71K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA1801GR-9JG 技术参数

生命周期：Obsolete零件包装代码：TSSOP
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：6 A最大漏极电流 (ID)：6 A
最大漏源导通电阻：0.034 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
最大脉冲漏极电流 (IDM)：24 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA1801GR-9JG 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
PA1801  
µ
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1801 is a switching device which can be  
driven directly by a 2.5-V power source.  
8
5
The µPA1801 features a low on-state resistance and  
excellent switching characteristics, and is suitable for  
applications such as power switch of portable machine  
and so on.  
1, 5, 8 :Drain  
2, 3, 6, 7:Source  
1.2 MAX.  
1.0±0.05  
4
:Gate  
0.25  
+5°  
–3°  
3°  
FEATURES  
0.5  
0.1±0.05  
• Can be driven by a 2.5-V power source  
• Low on-state resistance  
+0.15  
–0.1  
0.6  
1
4
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 24 mΩ MAX. (V = 4.5 V, I = 3.0 A)  
GS  
D
= 25 mΩ MAX. (V = 4.0 V, I = 3.0 A)  
6.4 ±0.2  
4.4 ±0.1  
3.15 ±0.15  
3.0 ±0.1  
GS  
D
= 34 mΩ MAX. (V = 2.5 V, I = 3.0 A)  
1.0 ±0.2  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
0.65  
0.8 MAX.  
0.1  
µPA1801GR-9JG  
Power TSSOP8  
+0.03  
0.27  
0.10 M  
–0.08  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note1  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
V
V
20  
V
V
Drain  
GSS  
±8.0  
±6.0  
±24  
2.0  
D(DC)  
I
A
Body  
D(pulse)  
I
A
Diode  
Gate  
T
P
W
°C  
•
Gate  
ch  
T
150  
Protection  
Diode  
Source  
stg  
T
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %  
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
The mark • shows major revised points.  
Document No.  
Date Published January 2000 NS CP(K)  
Printed in Japan  
D12135EJ1V0DS00 (1st edition)  
1996, 2000  
©
12345678

中文翻译

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