5秒后页面跳转
UPA1743TP-AZ PDF预览

UPA1743TP-AZ

更新时间: 2024-02-08 06:15:41
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 83K
描述
暂无描述

UPA1743TP-AZ 数据手册

 浏览型号UPA1743TP-AZ的Datasheet PDF文件第2页浏览型号UPA1743TP-AZ的Datasheet PDF文件第3页浏览型号UPA1743TP-AZ的Datasheet PDF文件第4页浏览型号UPA1743TP-AZ的Datasheet PDF文件第5页浏览型号UPA1743TP-AZ的Datasheet PDF文件第6页浏览型号UPA1743TP-AZ的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µ PA1743TP  
SWITCHING  
N-CHANNEL POWER MOS FET  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The µPA1743TP is N-channel MOS FET device that  
features a low on-state resistance and excellent switching  
characteristics, and designed for high voltage applications  
such as DC/DC converter.  
8
5
1, 2, 3  
4
5, 6, 7, 8, 9 ; Drain  
; Source  
; Gate  
FEATURES  
High voltage: VDSS = 250 V  
Gate voltage rating: ±30 V  
6.0 ±0.3  
1
4
0.8 ±0.2  
4.4 ±0.15  
+0.17  
–0.2  
5.2  
Low on-state resistance  
S
RDS(on) = 0.45 MAX. (VGS = 10 V, ID = 4.0 A)  
Low input capacitance  
0.10  
S
1.27 TYP.  
Ciss = 570 pF TYP. (VDS = 10 V, VGS = 0 V)  
Built-in gate protection diode  
Small and surface mount package (Power HSOP8)  
+0.10  
0.40  
0.12 M  
–0.05  
1
4
2.0 ±0.2  
9
ORDERING INFORMATION  
4.1 MAX.  
PART NUMBER  
PACKAGE  
8
5
µPA1743TP  
Power HSOP8  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted. All terminals are connected.)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
250  
±30  
±8.0  
±24  
26  
V
V
EQUIVALENT CIRCUIT  
A
Drain  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C) Note2  
Channel Temperature  
W
W
°C  
Body  
Diode  
Gate  
PT2  
1.0  
Tch  
150  
Gate  
Storage Temperature  
Tstg  
55 to +150 °C  
Protection  
Diode  
Single Avalanche Current Note3  
Single Avalanche Energy Note3  
Repetitive Avalanche Current Note4  
Source  
IAS  
8.0  
6.4  
8.0  
6.4  
A
mJ  
A
EAS  
IAR  
Repetitive Pulse Avalanche Energy Note4  
EAR  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Mounted on a glass epoxy board of 1 inch x 1 inch x 0.8 mm  
3. Starting Tch = 25°C, VDD = 125 V, RG = 25 , L = 100 µH, VGS = 20 0 V  
4. Tch(peak) 150°C, L = 100 µH  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G16371EJ1V0DS00 (1st edition)  
Date Published April 2003 NS CP(K)  
Printed in Japan  
2002  

与UPA1743TP-AZ相关器件

型号 品牌 获取价格 描述 数据表
UPA1744 ETC

获取价格

UPA1744TP Data Sheet | Data Sheet[03/2003]
UPA1744TP NEC

获取价格

SWITCHING N-CHANNEL POWER MOSFET
UPA1744TP-AZ NEC

获取价格

Power Field-Effect Transistor, 10A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Met
UPA1750 NEC

获取价格

Switching dual P-CHANNEL power mos fet industrial use
UPA1751 ETC

获取价格

TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO
UPA1752 ETC

获取价格

TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 20V V(BR)DSS | 5A I(D) | SO
UPA1753 ETC

获取价格

TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | SO
UPA1755 NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1755G NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1756 NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE