Datasheet > UPA1741

UPA1741

更新时间： 2024-02-16 06:56:37

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UPA1741TP Data Sheet \| Data Sheet[04/2003]

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UPA1741 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e6
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	21 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Bismuth (Sn98Bi2)	Base Number Matches：	1

UPA1741 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA1741TP

SWITCHING

N-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µPA1741TP is N-channel MOS FET device that features a

low on-state resistance and excellent switching characteristics, and

designed for high voltage applications such as DC/DC converter.

1, 2, 3

5, 6, 7, 8, 9 ; Drain

; Source

; Gate

FEATURES

• High voltage: V^DSS= 250 V

• Gate voltage rating: ±30 V

• Low on-state resistance

6.0 ±0.3

0.8 ±0.2

4.4 ±0.15

+0.17

–0.2

5.2

R^DS(on)= 0.79 Ω MAX. (V^GS= 10 V, I^D= 2.5 A)

• Low input capacitance

C^iss= 340 pF TYP. (V^DS= 10 V, V^GS= 0 V)

Built-in gate protection diode

Small and surface mount package (Power HSOP8)

0.10

1.27 TYP.

•

+0.10

–0.05

0.40

0.12 M

2.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

4.1 MAX.

µPA1741TP

Power HSOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, unless otherwise noted. All terminals are connected.)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

250

±30

±5.0

±15

EQUIVALENT CIRCUIT

Drain

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)^Note2

Channel Temperature

°C

P^T2

Body

Diode

Gate

T^ch

150

Storage Temperature

Tstg

−55 to +150 °C

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Gate

Protection

Diode

I^AS

5.0

2.5

5.0

2.5

Source

E^AS

Note4

Repetitive Avalanche Current

Repetitive Pulse Avalanche Energy ^Note4

I^AR

E^AR

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

3. Starting T^ch= 25°C, V^DD= 125 V, R^G= 25 Ω, L = 100 µH, V^GS= 20 → 0 V

4. T^ch(peak)≤ 150°C, L = 100 µH

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16373EJ1V0DS00 (1st edition)

Date Published April 2003 NS CP(K)

Printed in Japan

2003

12 3 4 5 6 7

中文翻译

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与UPA1741相关器件

型号	品牌	获取价格	描述	数据表
UPA1741TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1741TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 5A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-
UPA1742	ETC	获取价格	UPA1742TP Data Sheet \| Data Sheet[04/2003]
UPA1742TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1742TP-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO
UPA1742TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 7A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-
UPA1742TP-E2-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO
UPA1743	ETC	获取价格	UPA1743TP Data Sheet \| Data Sheet[04/2003]
UPA1743TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1743TP-AZ	NEC	获取价格	暂无描述

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