Datasheet > UPA1740

UPA1740

更新时间： 2024-01-05 15:45:08

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UPA1740TP Data Sheet \| Data Sheet[05/2002]

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UPA1740 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PDSO-G8	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.76	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	200 V	最大漏极电流 (ID)：	7 A
最大漏源导通电阻：	0.44 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e6
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	10
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

UPA1740 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1740TP

SWITCHING

N-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µPA1740TP is N-channel MOS FET device that features a

low on-state resistance and excellent swiching characteristics, and

designed for high voltage applications such as DC/DC converter.

1, 2, 3

5, 6, 7, 8, 9 : Drain

: Source

: Gate

FEATURES

• High voltage: V^DSS= 200 V

• Gate voltage rating: ±30 V

• Low on-state resistance

6.0 ±0.3

0.8 ±0.2

4.4 ±0.15

+0.17

–0.2

5.2

R^DS(on)= 0.44 Ω MAX. (V^GS= 10 V, I^D= 3.5 A)

• Low input capacitance

C^iss= 420 pF TYP. (V^DS= 10 V, V^GS= 0 V)

• Built-in gate protection diode

• Small and surface mount package (Power HSOP8)

• Avalanche capability rated

0.10 S

1.27 TYP.

+0.10

–0.05

0.40

0.12 M

2.0 ±0.2

ORDERING INFORMATION

4.1 MAX.

PART NUMBER

PACKAGE

µPA1740TP

Power HSOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, Unless otherwise noted, All terminals are connected.)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

200

±30

±7.0

±21

EQUIVALENT CIRCUIT

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)^Note2

Channel Temperature

°C

P^T2

1.0

Drain

Tch

150

Storage Temperature

Tstg

–55 to + 150

7.0

Body

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Repetitive Avalanche Current ^Note4

Repetitive Avalanche Energy ^Note4

Diode

Gate

I^AS

E^AS

4.9

Gate

I^AR

7.0

Protection

Diode

Source

E^AR

2.2

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec

3. Starting T^ch= 25°C, V^DD= 100 V, R^G= 25 Ω, L = 100 µH, V^GS= 20 → 0 V

4. T^ch≤ 125°C, V^DD= 100 V, R^G= 25 Ω

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2002 NS CP(K)

Printed in Japan

G15937EJ1V0DS00 (1st edition)

2001

12 3 4 5 6 7 8

中文翻译

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与UPA1740相关器件

型号	品牌	获取价格	描述	数据表
UPA1740TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1740TP-AZ	NEC	获取价格	暂无描述
UPA1741	ETC	获取价格	UPA1741TP Data Sheet \| Data Sheet[04/2003]
UPA1741TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1741TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 5A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-
UPA1742	ETC	获取价格	UPA1742TP Data Sheet \| Data Sheet[04/2003]
UPA1742TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1742TP-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO
UPA1742TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 7A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-
UPA1742TP-E2-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO

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