Datasheet > UPA1733G

UPA1733G

更新时间： 2024-02-22 01:36:36

品牌	Logo	应用领域
日电电子 - NEC		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	754K
描述
Power Field-Effect Transistor, 10A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8

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UPA1733G 技术参数

生命周期：	Transferred	零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PDSO-G8	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.38	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	10 A
最大漏源导通电阻：	0.022 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
最大脉冲漏极电流 (IDM)：	40 A	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

UPA1733G 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1733

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA1733 is P-Channel MOS Field Effect Transistor

designed for power management applications of

; Source

; Gate

1,2,ꢀ

notebook computers and Li-ion battery protection circuit.

; Drain

5,6,7,8

FEATURES

• Low on-resistance

6.0 0.ꢀ

R^DS(on)1= 10.3 mΩ TYP. (V^GS= –10 V, I^D= –5.0 A)

R^DS(on)2= 14.6 mΩ TYP. (V^GS= –4.5 V, I^D= –5.0 A)

R^DS(on)3= 16.5 mΩ TYP. (V^GS= –4.0 V, I^D= –5.0 A)

• Low C^iss: C^iss=2600 pF TYP.

4.4

5.ꢀ7 MAX.

0.8

0.5 0.2

0.10

• Small and surface mount package (Power SOP8)

1.27 0.78 MAX.

+0.10

–0.05

0.40

0.12 M

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1733G

Power SOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, All terminals are connected.)

EQUIVALENT CIRCUIT

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation (T^A= 25°C) ^Note2

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

–30

Drain

Body

Diode

Gate

2.0

150

°C

Channel Temperature

T^ch

Source

Storage Temperature

T^stg

–55 to + 150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 1200 mm²x 2.2 mm

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2001 NS CP(K)

Printed in Japan

G14988EJ2V1DS00 (2nd edition)

The mark # shows major revised points.

2000

12 3 4 5 6 7 8

中文翻译

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与UPA1733G相关器件

型号	品牌	获取价格	描述	数据表
UPA1740	ETC	获取价格	UPA1740TP Data Sheet \| Data Sheet[05/2002]
UPA1740TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1740TP-AZ	NEC	获取价格	暂无描述
UPA1741	ETC	获取价格	UPA1741TP Data Sheet \| Data Sheet[04/2003]
UPA1741TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1741TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 5A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-
UPA1742	ETC	获取价格	UPA1742TP Data Sheet \| Data Sheet[04/2003]
UPA1742TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA1742TP-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),SO
UPA1742TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 7A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-

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