Datasheet > TTA502

TTA502

更新时间： 2023-12-20 18:45:01

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	282K
描述
PNP Bipolar Transistor, -20 V, -2.5 A, SOT-23F

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TTA502 数据手册

TTA502

Bipolar Transistors Silicon PNP Epitaxial Type

TTA502

1. Applications

•

High-Speed Switching

•

DC-DC Converters

2. Features

(1) AEC-Q101 qualified (Note 1)

(2) High DC current gain: hFE = 200 to 500 (IC = -0.5 A)

(3) Low collector-emitter saturation voltage: VCE(sat) = -0.19 V (max)

(4) High-speed switching: tf = 40 ns (typ.)

Note 1: For detail information, please contact our sales.

3. Packaging and Internal Circuit

1: Base

2: Emitter

3: Collector

SOT-23F

Start of commercial production

2021-03

2021-09-17

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7

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