Datasheet > TTB145N08A

TTB145N08A

更新时间： 2024-11-06 17:01:51

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		栅
页数	文件大小	规格书
11页	911K
描述
Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，Trench MOS拥行更低的导通屯阻和栅漏电荷密度，因而拥行更低的导通和开义损耗及更快的开义速度。同时由

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TTB145N08A 数据手册

TTA145N08A,TTB145N08A,TTP145N08A

Wuxi Unigroup Microelectronics CO.,LTD.

85V N-Channel Trench MOSFET(Preliminary)

General Description

Product Summary

V_DS

85V

l Trench Power technology

l Low R_DS(ON)

I_D(at V_GS=10V)

145A

R_DS(ON)(at V_GS=10V)

< 5.9mΩ

l Low Gate Charge

l Optimized for fast-switching applications

Applications

100% UIS Tested

100% DVDS Tested

l Synchronous Rectification in DC/DC and AC/DC Converters

l Isolated DC/DC Converters in Telecom and Industrial

TO-220

TO-220F

TO-263

Part Number

Package Type

Form

Marking

TTA145N08A

TTB145N08A

TTP145N08A

TO-220F

TO-263

TO-220

Tape&Reel

Tube

145N08A

Absolute Maximum Ratings (T_A=25ºC unless otherwise noted)

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25ºC

105

102

Continuous Drain Current

I_D

T_C=100ºC

Pulsed Drain Current

I_DM

I_AS

435

Avalanche Current

Single Pulse Avalanche Energy

L =0.3mH

T_C=25ºC

E_AS

470

ºC

272

Power Dissipation

P_D

T_C=100ºC

136

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

T_J, T_STG

-55 to 175

Symbol

R_ƟJC

Maximum

0.55

Units

Maximum Junction-to-Case

Steady-State

ºC/W

Maximum Junction-to-Ambient

R_ƟJA

100

V1.0

www.tsinghuaicwx.com

12 3 4 5 6 7...11

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