Datasheet > TTB1067B

TTB1067B

更新时间： 2024-11-06 14:56:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	316K
描述
PNP Bipolar Transistor, -80 V, -2 A, TO-126N

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TTB1067B 数据手册

TTB1067B

Bipolar Transistors Silicon PNP Epitaxial Type (Darlington Transistor)

TTB1067B

1. Applications

•

Micromotor Drivers

Hammer Drivers

Switching

Power Amplifiers

2. Features

(1) High DC current gain

: hFE = 2000 (min) (VCE = -2 V, IC = -1 A)

(2) Low collector-emitter saturation voltage : VCE(sat) = -1.5 V (max) (IC = -1 A, IB = -1 mA)

(3) Complementary to TTD1509B

3. Packaging and Internal Circuit (Note)

1. Emitter

2. Collector

3. Base

TO-126N

Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation

voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical

isolation from surrounding parts.

Start of commercial production

2014-02

2016-09-30

Rev.2.0

12 3 4 5 6 7

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