Datasheet > TTB145N06A

TTB145N06A

更新时间： 2024-11-06 17:00:55

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		栅
页数	文件大小	规格书
8页	826K
描述
Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，Trench MOS拥行更低的导通屯阻和栅漏电荷密度，因而拥行更低的导通和开义损耗及更快的开义速度。同时由

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TTB145N06A 数据手册

TTB145N06A,TTP145N06A

Wuxi Unigroup Microelectronics CO.,LTD.

60V N-Channel Trench MOSFET



General Description

Product Summary

 Trench Power technology

 Low R_DS(ON)

V_DS

60V

I_D(at V_GS=10V)

145A

 Low Gate Charge

R_DS(ON)(at V_GS=10V)

< 4.8mΩ

 Optimized for fast-switching applications

Applications

100% UIS Tested

 Synchronous Rectification in DC/DC and AC/DC Converters

 Isolated DC/DC Converters in Telecom and Industrial

TO-263

TO-220

Part Number

Package Type

Form

Marking

TTB145N06A

TTP145N06A

TO-263

TO-220

Tape & Reel

Tube

TTB145N06A

TTP145N06A

Absolute Maximum Ratings (T_A=25ºC unless otherwise noted)

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25ºC

105

Continuous Drain Current

I_D

T_C=100ºC

Pulsed Drain Current

I_DM

I_AS

435

Avalanche Current

Single Pulse Avalanche Energy

L =0.3mH

T_C=25ºC

E_AS

487

ºC

217

Power Dissipation

P_D

T_C=100ºC

108

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

T_J, T_STG

-55 to 175

Symbol

R_ƟJC

Maximum

0.69

Units

ºC /W

Maximum Junction-to-Case

Steady-State

Maximum Junction-to-Ambient

R_ƟJA

100

V1.0

www.tsinghuaicwx.com

12 3 4 5 6 7 8

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